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MAX1122 даташитФункция этой детали – «170msps Analog-to-digital Converter». |
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Номер в каталоге | Производители | Описание | |
MAX1122 | Maxim Integrated |
170Msps Analog-to-Digital Converter 19-3027; Rev 2; 8/08
1.8V, 10-Bit, 170Msps Analog-to-Digital Converter with LVDS Outputs for Wideband Applications
General Description
The MAX1122 is a monolithic 10-bit, 170Msps analogto-digital converter (ADC) optimized for outstanding dynamic performance at high IF frequencies up to 500MHz. The product operates with conversion rates of up to 170Msps while consuming only 460mW. At 170Msps and an input frequency of 100MHz, the MAX1122 achieves a spurious-free dynamic range (SFDR) of 72dBc. Its excellent signal-to-nois |
Это результат поиска, начинающийся с "1122", "MAX1" |
Номер в каталоге | Производители | Описание | |
1N1122A | GeneSiC |
Silicon Standard Recovery Diode Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V IF = 12 A
DO |
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1N1122AR | GeneSiC |
Silicon Standard Recovery Diode Silicon Standard Recovery Diode
Features • High Surge Capability • Types from 50 V to 600 V VRRM • Not ESD Sensitive
Note: 1. Standard polarity: Stud is cathode. 2. Reverse polarity (R): Stud is anode. 3. Stud is base.
1N1199A thru 1N1206AR
VRRM = 50 V - 600 V IF = 12 A
DO |
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2SA1122 | Hitachi Semiconductor |
Silicon PNP Epitaxial 2SA1122
Silicon PNP Epitaxial
Application
Low frequency amplifier
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. Collector
2SA1122
Absolute Maximum Ratings (Ta = 25°C)
Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector |
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2SB1122 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:2040A
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1122/2SD1622
Low-Frequency Power Amplifier Applications
Applications
· Voltage regulators relay drivers, lamp drivers, electrical equipment.
Features
· Adoption of FBET process.. · Very small size making i |
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2SB1122 | Kexin |
PNP Epitaxial Planar Silicon Transistors SMD Type
Transistors
PNP Epitaxial Planar Silicon Transistors 2SB1122
Features
Adoption of FBET process.. Very small size making it easy to provide highdensity hybrid IC’ s.
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-b |
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2SB1122 | ON Semiconductor |
Bipolar Transistor Ordering number : EN2040C
2SB1122
Bipolar Transistor
–50V, –1A, Low VCE(sat) PNP Single PCP
http://onsemi.com
Applicaitons
• Voltage regulators relay drivers, lamp drivers, electrical equipment
Features
• Adoption of FBET process
• Ultrasmall size making it easy to |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |