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MAX1182 даташитФункция этой детали – «Low-power Adc». |
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Номер в каталоге | Производители | Описание | |
MAX1182 | Maxim Integrated Products |
Low-Power ADC 19-2094; Rev 1; 4/06
Dual 10-Bit, 65Msps, 3V, Low-Power ADC with Internal Reference and Parallel Outputs MAX1182
General Description
The MAX1182 is a 3V, dual 10-bit analog-to-digital converter (ADC) featuring fully-differential wideband trackand-hold (T/H) inputs, driving two pipelined, 9-stage ADCs. The MAX1182 is optimized for low-power, highdynamic performance applications in imaging, instrumentation and digital communication applications. This ADC operates from a single 2.7V to 3.6V supply, consuming only 195mW wh |
Это результат поиска, начинающийся с "1182", "MAX1" |
Номер в каталоге | Производители | Описание | |
2DB1182Q | Diodes |
32V PNP MEDIUM POWER TRANSISTOR Features
BVCEO > -32V IC = -2A High Continuous Collector Current ICM = -3A Peak Pulse Current Epitaxial Planar Die Construction Low Collector-Emitter Saturation Voltage Ideal for Medium Power Switching or Amplification Applications Totally Lead-Free & |
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2SA1182 | Toshiba Semiconductor |
Silicon PNP Epitaxial Transistor TOSHIBA Transistor Silicon PNP Epitaxial (PCT process)
2SA1182
2SA1182
Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA
• Comp |
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2SA1182-HF | Kexin |
PNP Transistors SMD Type
Transistors
PNP Transistors 2SA1182-HF
SOT-23-3
2.9 +0.2 -0.1
0.4 +0.1 -0.1
3
+0.22.8 -0.1
■ Features
● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G� |
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2SB1182 | ROHM Semiconductor |
Medium power Transistor Medium power transistor (32V, 2A)
2SB1182 / 2SB1240
Features 1) Low VCE(sat).
VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862.
Structure Epitaxial planar type PNP silicon transistor
Dimensions (Unit : mm)
2SB1182
6.5±0.2 5.1 |
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2SB1182 | Inchange Semiconductor |
Silicon PNP Power Transistor isc Silicon PNP Power Transistor
INCHANGE Semiconductor
2SB1182
DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power dissipation
ABSOLUTE MAXIMUM RATINGS(Ta=25� |
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2SB1182 | Kexin |
Medium Power Transistor SMD Type
Medium Power Transistor 2SB1182
TO-252
+0.15 1.50 -0.15
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
Low VCE(sat). Epitaxial planar type
6.50 +0.2 5.30-0.2
+0.15 -0.15
+0.2 9.70 -0.2
+0.1 0.80-0.1
+0.15 0.50 -0.15
0.127 max
2.3
+0.15 4.60-0.15
+0 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |