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MAX1182 даташит

Функция этой детали – «Low-power Adc».



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Номер в каталоге Производители Описание PDF
MAX1182 Maxim Integrated Products
Maxim Integrated Products
  Low-Power ADC

19-2094; Rev 1; 4/06 Dual 10-Bit, 65Msps, 3V, Low-Power ADC with Internal Reference and Parallel Outputs MAX1182 General Description The MAX1182 is a 3V, dual 10-bit analog-to-digital converter (ADC) featuring fully-differential wideband trackand-hold (T/H) inputs, driving two pipelined, 9-stage ADCs. The MAX1182 is optimized for low-power, highdynamic performance applications in imaging, instrumentation and digital communication applications. This ADC operates from a single 2.7V to 3.6V supply, consuming only 195mW wh
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Это результат поиска, начинающийся с "1182", "MAX1"

Номер в каталоге Производители Описание PDF
2DB1182Q Diodes
Diodes

32V PNP MEDIUM POWER TRANSISTOR

Features  BVCEO > -32V  IC = -2A High Continuous Collector Current  ICM = -3A Peak Pulse Current  Epitaxial Planar Die Construction  Low Collector-Emitter Saturation Voltage  Ideal for Medium Power Switching or Amplification Applications  Totally Lead-Free &
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2SA1182 Toshiba Semiconductor
Toshiba Semiconductor

Silicon PNP Epitaxial Transistor

TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1182 2SA1182 Audio Frequency Low Power Amplifier Applications Driver Stage Amplifier Applications Switching Applications Unit: mm • Excellent hFE linearity: hFE (2) = 25 (min) at VCE = −6 V, IC = −400 mA • Comp
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2SA1182-HF Kexin
Kexin

PNP Transistors

SMD Type Transistors PNP Transistors 2SA1182-HF SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 +0.22.8 -0.1 ■ Features ● Collector Current Capability IC=-0.5A ● Collector Emitter Voltage VCEO=-32V ● Complementary to 2SC2859-HF. ● Pb−Free Package May be Available. The G�
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2SB1182 ROHM Semiconductor
ROHM Semiconductor

Medium power Transistor

Medium power transistor (32V, 2A) 2SB1182 / 2SB1240 Features 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2) Complements 2SD1758 / 2SD1862. Structure Epitaxial planar type PNP silicon transistor Dimensions (Unit : mm) 2SB1182 6.5±0.2 5.1
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2SB1182 Inchange Semiconductor
Inchange Semiconductor

Silicon PNP Power Transistor

isc Silicon PNP Power Transistor INCHANGE Semiconductor 2SB1182 DESCRIPTION ·Small and slim package ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power dissipation ABSOLUTE MAXIMUM RATINGS(Ta=25�
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2SB1182 Kexin
Kexin

Medium Power Transistor

SMD Type Medium Power Transistor 2SB1182 TO-252 +0.15 1.50 -0.15 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features Low VCE(sat). Epitaxial planar type 6.50 +0.2 5.30-0.2 +0.15 -0.15 +0.2 9.70 -0.2 +0.1 0.80-0.1 +0.15 0.50 -0.15 0.127 max 2.3 +0.15 4.60-0.15 +0
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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