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MAX1470EUI даташит

Функция этой детали – «315mhz Low-power / +3v Superheterodyne Receiver».



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Номер в каталоге Производители Описание PDF
MAX1470EUI Maxim Integrated
Maxim Integrated
  315MHz Low-Power / +3V Superheterodyne Receiver

19-2135; Rev 1; 8/02 315MHz Low-Power, +3V Superheterodyne Receiver General Description The MAX1470 is a fully integrated low-power CMOS superheterodyne receiver for use with amplitude-shiftkeyed (ASK) data in the 315MHz band. With few required external components, and a low-current power-down mode, it is ideal for cost- and power-sensitive applications in the automotive and consumer markets. The chip consists of a 315MHz low-noise amplifier (LNA), an image rejection mixer, a fully integrated 315MHz phase-lock-loop (PL
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Это результат поиска, начинающийся с "1470EUI", "MAX1470"

Номер в каталоге Производители Описание PDF
2N1470 Inchange Semiconductor
Inchange Semiconductor

Silicon NPN Power Transistor

INCHANGE Semiconductor isc Silicon NPN Power Transistor isc Product Specification 2N1470 DESCRIPTION ·Excellent Safe Operating Area ·Collector-Emitter Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC = 1.5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) APPLICATIO
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2SA1470 Sanyo Semicon Device
Sanyo Semicon Device

60V/7A High-Speed Switching Applications

Ordering number:EN1972A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1470/2SC3747 60V/7A High-Speed Switching Applications Applications · Inductance, lamp drivers. · Inveters, conveters (strobes, flashes, FLT lighting circiuts). · Power amplifiers (high-power car stereos,
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2SA1470 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3747 ·Low saturation voltage ·Fast switching time APPLICATIONS ·Inductance,lamp drivers ·Inverters ,converters ·Power a
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2SA1470 Inchange Semiconductor
Inchange Semiconductor

POWER TRANSISTOR

Inchange Semiconductor Product Specification Silicon PNP Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SC3747 ·Low saturation voltage ·Fast switching time APPLICATIONS ·Inductance,lamp drivers ·Inverters ,converters ·Power amplification ·High-
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2SB1470 Panasonic Semiconductor
Panasonic Semiconductor

For Power Amplification

Power Transistors 2SB1470 Silicon PNP triple diffusion planar type darlington Unit: mm (10.0) (6.0) (2.0) (4.0) For power amplification Complementary to 2SD2222 ■ Features • Optimum for 120 W HiFi output • High forward current transfer ratio hFE • Low collector-emitter
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2SB1470 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1470 DESCRIPTION ·With TO-3PL package ·Complement to type 2SD2222 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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