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MTB20N03Q8 даташитФункция этой детали – «N-channel LogIC Level Enhancement Mode Power Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
MTB20N03Q8 | Cystech Electonics |
N-Channel LOGIC Level Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C396Q8 Issued Date : 2009.04.29 Revised Date : Page No. : 1/6
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03Q8
Description
BVDSS ID RDSON(max)
30 V 8A 20mΩ
The MTB20N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low |
Это результат поиска, начинающийся с "20N03Q8", "MTB20N0" |
Номер в каталоге | Производители | Описание | |
MTNN20N03Q8 | CYStech Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET CYStech Electronics Corp.
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Spec. No. : C805Q8 Issued Date : 2009.12.30 Revised Date :2011.03.21 Page No. : 1/9
MTNN20N03Q8
Description
BVDSS ID RDSON(MAX)
N-CH 1 30V 8A 20mΩ
N-CH 2 60V 0.115A 5Ω
The MTNN20N03Q8 provides the designer |
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MTB20N03AQ8 | Cystech Electonics |
N-Channel LOGIC Level Enhancement Mode Power MOSFET CYStech Electronics Corp.
Spec. No. : C737Q8 Issued Date : 2009.04.29 Revised Date : 2012.03.01 Page No. : 1/9
N-Channel LOGIC Level Enhancement Mode Power MOSFET
MTB20N03AQ8
Description
BVDSS ID RDS(ON)@VGS=10V, ID=9A RDS(ON)@VGS=4.5V, ID=7A
30V 10.2A 13.6 mΩ(typ) 23.6 mΩ |
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MTB20N06J3 | Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C925J3 Issued Date : 2013.08.13 Revised Date : 2013.12.30 Page No. : 1/ 9
MTB20N06J3
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic |
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MTB20N06J3-T3-G | Cystech Electonics |
N-Channel Enhancement Mode Power MOSFET CYStech Electronics Corp.
N-Channel Enhancement Mode Power MOSFET
Spec. No. : C925J3 Issued Date : 2013.08.13 Revised Date : 2013.12.30 Page No. : 1/ 9
MTB20N06J3
Features
• Low On Resistance • Simple Drive Requirement • Low Gate Charge • Fast Switching Characteristic |
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PTB20038 | Ericsson |
25 Watts/ 860-900 MHz Cellular Radio RF Power Transistor e
PTB 20038 25 Watts, 860–900 MHz Cellular Radio RF Power Transistor
Description
The 20038 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz frequency band. Rated at 25 watts minimum output power, it may be used for b |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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