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даташит N0413N IC Даташиты PDF

Номер в каталоге Описание Производители PDF
1 N0413N   N-CHANNEL MOSFET FOR SWITCHING

N0413N N-CHANNEL MOSFET FOR SWITCHING Preliminary Data Sheet R07DS0555EJ0100 Rev.1.00 Nov 07, 2011 Description The N0413N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS (on) = 3.3 mΩ MAX. (VGS = 10 V, ID = 50 A) • Low input capacitance Ciss = 5550 pF TYP. (VDS = 25 V, VGS = 0 V) • High current ID(DC) = ±100 A • RoHS Compliant Ordering Information Part No. N0413N-ZK-E1-AY ∗1 Lead Plating Pure Sn (Tin) Tape Packing N0413
Renesas
Renesas
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N0 даташита ( переписка )

Номер в каталоге Описание Производители PDF
N08M1618L1A

8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K X 16 bit

AMI Semiconductor, Inc. ULP Memory Solutions 670 North McCarthy Blvd. Suite 220 Milpitas, CA 95035 PH: 408-935-7777, FAX: 408-935-7770 N08M1618L1A Advance Information 8Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 512K × 16 bit Overview The N08M1618L1A
AMI SEMICONDUCTOR
AMI SEMICONDUCTOR
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N0392WC120

Phase Control Thyristor

WESTCODE Date:- 13 Nov, 2001 Data Sheet Issue:- 1 Phase Control Thyristor Types N0392WC120 to N0392WC160 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak r
Westcode Semiconductors
Westcode Semiconductors
pdf
N01L6183A

1Mb Ultra-Low Power Asynchronous CMOS SRAM

N01L6183A 1Mb Ultra-Low Power Asynchronous CMOS SRAM 64K × 16 bit Overview The N01L6183A is an integrated memory device containing a 1 Mbit Static Random Access Memory organized as 65,536 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced
ON Semiconductor
ON Semiconductor
pdf
N08L63W2A

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K X 16bit

N08L63W2A 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L63W2A is an integrated memory device containing a 8 Mbit Static Random Access Memory organized as 524,288 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanc
ON Semiconductor
ON Semiconductor
pdf
N08L163WC2C

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC2C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC2C is an integr
NanoAmp Solutions
NanoAmp Solutions
pdf
N08L163WC1C

8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K x 16 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L163WC1C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 512K × 16 bit Overview The N08L163WC1C is an integr
NanoAmp Solutions
NanoAmp Solutions
pdf
N0992YS060

Phase Control Thyristor

WESTCODE Date:- 15 Feb, 2001 Data Sheet Issue: 1 Phase Control Thyristor Types N0992YS020 to N0992YS060 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak re
WESTCODE
WESTCODE
pdf
N08L083WC2C

8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K x 8 bit

NanoAmp Solutions, Inc. 670 North McCarthy Blvd. Suite 220, Milpitas, CA 95035 ph: 408-935-7777, FAX: 408-935-7770 www.nanoamp.com N08L083WC2C Advance Information 8Mb Ultra-Low Power Asynchronous CMOS SRAM 1024K × 8 bit Overview The N08L083WC2C is an integr
NanoAmp Solutions
NanoAmp Solutions
pdf
N0992YS040

Phase Control Thyristor

WESTCODE Date:- 15 Feb, 2001 Data Sheet Issue: 1 Phase Control Thyristor Types N0992YS020 to N0992YS060 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak re
WESTCODE
WESTCODE
pdf
N0416SC080

Phase Control Thyristor

Date:- 23rd Sept 2014 Data Sheet Issue:- 3 Phase Control Thyristor Types N0416SC040 to N0416SC080 Absolute Maximum Ratings VDRM VDSM VRRM VRSM VOLTAGE RATINGS Repetitive peak off-state voltage, (note 1) Non-repetitive peak off-state voltage, (note 1) Repetitive peak reverse v
IXYS
IXYS
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Номер в каталоге Описание Производители PDF
CD4515BC

The CD4514BC and CD4515BC are 4-to-16 line decoders with latched inputs implemented with complementary MOS (CMOS) circuits constructed with N- and P-channel enhancement mode transistors.

Fairchild Semiconductor
Fairchild Semiconductor
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HV101WU1-1E6

HV101WU1-1E6 is a color active matrix TFT LCD module using amorphous silicon TFT's (Thin Film Transistors) as an active switching devices.

HYDIS
HYDIS
pdf

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свойства компонента (features), его основные параметры (quick reference data), обозначение на принципиальных схемах (symbol), краткое описание (general description).



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