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N116BGE-EA2 даташитФункция этой детали – «Tft Lcd». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
N116BGE-EA2 | INNOLUX |
TFT LCD PRODUCT SPECIFICATION
Doc. Number:
□ Tentative Specification □ Preliminary Specification ■ Approval Specification
MODEL NO.: N116BGE SUFFIX: EA2
Customer: APPROVED BY
Name / Title Note
SIGNATURE
Please return 1 copy for your confirmation with your signature and comments.
Approved By
楊竣傑
2013-10-09 10:58:56 CST
Checked By
曹文彬
2013-10-09 10:45:28 CST
Prepared By
劉建宏
2013-10-04 11:17:43 CST
Version 2.0
11 October 2013
The copyright belongs to InnoLux. Any unauthorized use is prohibited.
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Это результат поиска, начинающийся с "116BGE", "N116BGE-" |
Номер в каталоге | Производители | Описание | |
N116BGE-L41 | CMI MEI |
TFT LCD Module PRODUCT SPECIFICATION
Doc. Number:
¡¼ ¡¼ ¡½
Tentative Specification Preliminary Specification Approval Specification
MODEL NO.: N116BGE SUFFIX: L41
Customer: Common Model APPROVED BY
Name / Title Note
SIGNATURE
www.jxlcd.com www.jxlcd.com
Please return 1 copy for your |
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N116BGE-L42 | CMI MEI |
TFT LCD Module PRODUCT SPECIFICATION
Doc. Number:
Tentative Specification Preliminary Specification Approval Specification
MODEL NO.: N116BGE SUFFIX: L42
Customer: Acer APPROVED BY
SIGNATURE
Name / Title Note
Please return 1 copy for your confirmation with your signature and comments.
Appr |
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10116 | Philips |
Line Receiver / Triple Differential Line Receiver |
|
10H116 | ON Semiconductor |
MC10H116 Datasheet.es
MC10H116 Triple Line Receiver
The MC10H116 is a functional/pinout duplication of the MC10116, with 100% improvement in propagation delay and no increase in power–supply current. • Propagation Delay, 1.0 ns Typical • Power Dissipation 85 mW Typ/Pkg (same |
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1165892 | Multicomp |
High power NPN silicon power transistors 1165892
High power NPN silicon power transistors.
These devices are designed for linear amplifiers, series pass regulators, and inductive
switching applications.
Features:
• Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc.
• Pb-free package |
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1165899 | Multicomp |
High power NPN silicon transistors 1165899
TO-3
High power NPN silicon transistors.
Features:
• High voltage capability. • High current capability. • Fast switching speed.
Applications:
Switch mode power supplies. Flyback and forward single transistor low power converters.
Description:
The BUX48/A silicon m |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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