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N116BGE-EA2 даташит

Функция этой детали – «Tft Lcd».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
N116BGE-EA2 INNOLUX
INNOLUX
  TFT LCD

PRODUCT SPECIFICATION Doc. Number: □ Tentative Specification □ Preliminary Specification ■ Approval Specification MODEL NO.: N116BGE SUFFIX: EA2 Customer: APPROVED BY Name / Title Note SIGNATURE Please return 1 copy for your confirmation with your signature and comments. Approved By 楊竣傑 2013-10-09 10:58:56 CST Checked By 曹文彬 2013-10-09 10:45:28 CST Prepared By 劉建宏 2013-10-04 11:17:43 CST Version 2.0 11 October 2013 The copyright belongs to InnoLux. Any unauthorized use is prohibited. 1
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Это результат поиска, начинающийся с "116BGE", "N116BGE-"

Номер в каталоге Производители Описание PDF
N116BGE-L41 CMI MEI
CMI MEI

TFT LCD Module

PRODUCT SPECIFICATION Doc. Number: ¡¼ ¡¼ ¡½ Tentative Specification Preliminary Specification Approval Specification MODEL NO.: N116BGE SUFFIX: L41 Customer: Common Model APPROVED BY Name / Title Note SIGNATURE www.jxlcd.com www.jxlcd.com Please return 1 copy for your
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N116BGE-L42 CMI MEI
CMI MEI

TFT LCD Module

PRODUCT SPECIFICATION Doc. Number: Tentative Specification Preliminary Specification Approval Specification MODEL NO.: N116BGE SUFFIX: L42 Customer: Acer APPROVED BY SIGNATURE Name / Title Note Please return 1 copy for your confirmation with your signature and comments. Appr
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10116 Philips
Philips

Line Receiver / Triple Differential Line Receiver

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10H116 ON Semiconductor
ON Semiconductor

MC10H116

Datasheet.es MC10H116 Triple Line Receiver The MC10H116 is a functional/pinout duplication of the MC10116, with 100% improvement in propagation delay and no increase in power–supply current. • Propagation Delay, 1.0 ns Typical • Power Dissipation 85 mW Typ/Pkg (same
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1165892 Multicomp
Multicomp

High power NPN silicon power transistors

1165892 High power NPN silicon power transistors. These devices are designed for linear amplifiers, series pass regulators, and inductive switching applications. Features: • Forward biased second breakdown current capability IS/b = 2.5 A dc at VCE = 60V dc. • Pb-free package
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1165899 Multicomp
Multicomp

High power NPN silicon transistors

1165899 TO-3 High power NPN silicon transistors. Features: • High voltage capability. • High current capability. • Fast switching speed. Applications: Switch mode power supplies. Flyback and forward single transistor low power converters. Description: The BUX48/A silicon m
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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