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NA-1.5W-K даташит

Функция этой детали – «Solid State Relays».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NA-1.5W-K Fujitsu Microelectronics
Fujitsu Microelectronics
  Solid State relays

MINIATURE RELAY 2 POLES—1 to 2 A (FOR SIGNAL SWITCHING) NA SERIES s FEATURES Slim type relay for high density mounting Conforms to Bellcore specification and FCC Part 68 —Dielectric strength 1,500 VAC between coil and contacts —Surge strength 2,500 V between coil and contacts (at 2 × 10 s surge wave) q UL, CSA recognized q High sensitivity and low consumption power q Maximum switching capacity—4.2 A 700 VAC q High reliability—bifurcated contacts q DIL pitch terminals q Plastic sealed ty
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Это результат поиска, начинающийся с "NA-1", "NA-1.5"

Номер в каталоге Производители Описание PDF
1MBI200NA-120 Fuji Electric
Fuji Electric

IGBT MODULE ( N series )

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications
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1MBI300NA-120 Fuji Electric
Fuji Electric

IGBT MODULE(N series)

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications
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1MBI400NA-120 Fuji Electric
Fuji Electric

IGBT MODULE(N series)

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications
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CAT28LV64NA-15T Catalyst Semiconductor
Catalyst Semiconductor

64K-Bit CMOS PARALLEL EEPROM

CAT28LV64 64K-Bit CMOS PARALLEL EEPROM FEATURES ■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation: H GEN FR ALO EE LE A D F R E ETM – 150/200/250ns ■ Low power CMOS dissipation: – 1 to 32 bytes in 5ms
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EBD21RD4ABNA-10 Elpida Memory
Elpida Memory

2GB Registered DDR SDRAM DIMM

PRELIMINARY DATA SHEET 2GB Registered DDR SDRAM DIMM EBD21RD4ABNA (256M words × 72 bits, 2 Banks) Description The EBD21RD4ABNA is a 256M words × 72 bits, 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of DDR SDRAM sealed in TCP package. Read and write operations
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INA-10386 Agilent(Hewlett-Packard)
Agilent(Hewlett-Packard)

Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier

Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-10386 Features • Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5␣ GHz • 10 dBm Typical P1dB at 1.5␣ GHz • Unconditionally Stable (k>1) • Surface Mount
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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