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NA-1.5W-K даташитФункция этой детали – «Solid State Relays». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NA-1.5W-K | Fujitsu Microelectronics |
Solid State relays
MINIATURE RELAY
2 POLES—1 to 2 A (FOR SIGNAL SWITCHING)
NA SERIES
s FEATURES
Slim type relay for high density mounting Conforms to Bellcore specification and FCC Part 68 —Dielectric strength 1,500 VAC between coil and contacts —Surge strength 2,500 V between coil and contacts (at 2 × 10 s surge wave) q UL, CSA recognized q High sensitivity and low consumption power q Maximum switching capacity—4.2 A 700 VAC q High reliability—bifurcated contacts q DIL pitch terminals q Plastic sealed ty |
Это результат поиска, начинающийся с "NA-1", "NA-1.5" |
Номер в каталоге | Производители | Описание | |
1MBI200NA-120 | Fuji Electric |
IGBT MODULE ( N series ) IGBT MODULE ( N series ) n Features
• Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
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1MBI300NA-120 | Fuji Electric |
IGBT MODULE(N series) IGBT MODULE ( N series ) n Features
• Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
|
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1MBI400NA-120 | Fuji Electric |
IGBT MODULE(N series) IGBT MODULE ( N series ) n Features
• Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current)
n Outline Drawing
n Applications
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CAT28LV64NA-15T | Catalyst Semiconductor |
64K-Bit CMOS PARALLEL EEPROM CAT28LV64
64K-Bit CMOS PARALLEL EEPROM FEATURES
■ 3.0V to 3.6 V Supply ■ Read access times: ■ CMOS and TTL compatible I/O ■ Automatic page write operation:
H
GEN FR ALO
EE
LE
A D F R E ETM
– 150/200/250ns
■ Low power CMOS dissipation:
– 1 to 32 bytes in 5ms |
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EBD21RD4ABNA-10 | Elpida Memory |
2GB Registered DDR SDRAM DIMM PRELIMINARY DATA SHEET
2GB Registered DDR SDRAM DIMM
EBD21RD4ABNA (256M words × 72 bits, 2 Banks)
Description
The EBD21RD4ABNA is a 256M words × 72 bits, 2 bank Double Data Rate (DDR) SDRAM Module, mounted 36 pieces of DDR SDRAM sealed in TCP package. Read and write operations |
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INA-10386 | Agilent(Hewlett-Packard) |
Low Noise/ Cascadable Silicon Bipolar MMIC Amplifier Low Noise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data
INA-10386
Features
• Cascadable 50 Ω Gain Block • 3 dB Bandwidth: DC to 1.8 GHz • 26 dB Typical Gain at 1.5␣ GHz • 10 dBm Typical P1dB at 1.5␣ GHz • Unconditionally Stable (k>1) • Surface Mount |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |