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NCE0140K2 даташитФункция этой детали – «Nce N-channel Enhancement Mode Power Mosfet». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| NCE0140K2 |  NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0140K2
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140K2 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS = 100V,ID =40A RDS(ON) < 17mΩ @ VGS=10V
(Typ:14.5mΩ)
● Special process technology for high ESD capability ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stabili |
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Это результат поиска, начинающийся с "0140K2", "NCE014" |
| Номер в каталоге | Производители | Описание | |
| NCE0140IA | NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0140IA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140IA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Featu |
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| NCE0140K | NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0140K
NCE N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The NCE0140K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL FEATURE |
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| NCE0140KA | NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0140KA
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0140KA uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Featu |
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| PTFB201402FC |  Infineon |
High Power RF LDMOS Field Effect Transistor PTFB201402FC
High Power RF LDMOS Field Effect Transistor 140 W, 28 V, 2010 – 2025 MHz
Description
The PTFB201402FC integrates two 70 W LDMOS FETs into one open-cavity ceramic package. It is designed primarily for Doherty cellular amplifier applications in the 2010 to 2025 MHz |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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| DataSheet26.com | 2020 | Контакты |