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NCE0203S даташитФункция этой детали – «Nce N-channel Enhancement Mode Power Mosfet». |
Показать результаты поиска |
| Номер в каталоге | Производители | Описание | |
| NCE0203S |  NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE0203S
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE0203S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =200V,ID =3.9A RDS(ON) < 79mΩ @ VGS=10V
（Typ：56mΩ）
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses
Schematic di |
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Это результат поиска, начинающийся с "0203S", "NCE02" |
| Номер в каталоге | Производители | Описание | |
| FYV0203S |  Fairchild Semiconductor |
Schottky Diode FYV0203S/DN/DP/DS
FYV0203S/DN/DP/DS
3
3
Connection Diagram
3 3
YB1
2 1
1
2
1
FYV0203S 3
1
FYV0203DP 2 3
Marking
FYV0203S = YB1 FYV0203DN = YB2 FYV0203DP = YB3 FYV0203DS = YB4
SOT-23
1 FYV0203DN 2
1 FYV0203DS 2
Schottky Diode
Absolute Maximum Ratings TA=25°C unless |
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| FYV0203S | Fairchild Semiconductor |
Schottky Diode
FYV0203S/DN/DP/DS
FYV0203S/DN/DP/DS
3
3
Connection Diagram
3 3
YB1
2 1
1
2
1
FYV0203S 3
1
FYV0203DP 2 3
Marking
FYV0203S = YB1 FYV0203DN = YB2 FYV0203DP = YB3 FYV0203DS = YB4
SOT-23
1 FYV0203DN 2
1 FYV0203DS 2
Schottky Diode
Absolute Maximum Rat |
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| MSC0203S |  MORESEMI |
N and P-Channel Enhancement Mode Power MOS FET MSC0203S
N and P-Channel Enhancement Mode Power MOS FET
General Features
● N-Channel
VDS = 20V,ID = 3A RDS(ON) < 65mΩ @ VGS=4.5V RDS(ON) < 90mΩ @ VGS=2.5V ● P-Channel
VDS = -20V,ID = -3A RDS(ON) < 110mΩ @ VGS=-4.5V RDS(ON) < 140mΩ @ VGS=-2.5V
Lead Free
● High po |
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| RQK0203SGDQA |  Renesas |
Silicon N-Channel MOS FET RQK0203SGDQA
Silicon N Channel MOS FET Power Switching
Features
• Low on-resistance RDS(on) = 68 mΩ typ (VGS = 4.5 V, ID = 1.5 A)
• Low drive current • High speed switching • 2.5 V gate drive
Outline
RENESAS Package code: PLSP0003ZB-A (Package name: MPAK)
3
Note: Markin |
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| ABB0203 |  Abracon Corporation |
Low Skew Output Buffer ABB0203
Low Skew Output Buffer
FEATURES
• • • • • • • • • Frequency range 75 ~ 180MHz. Internal phase locked loop will allow spread spectrum modulation on reference clock to pass to the outputs (up to 100kHz SST modulation). Zero input - outp |
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| AP0203GMT-HF |  Advanced Power Electronics |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET AP0203GMT-HF
Halogen-Free Product
Advanced Power Electronics Corp.
▼ Simple Drive Requirement ▼ SO-8 Compatible with Heatsink ▼ Low On-resistance ▼ RoHS Compliant & Halogen-Free G
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 2.2mΩ 155A
D
S
D D D
D |
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Последние обновления
| Номер в каталоге | Производители | Описание | |
| 2N3904 |  Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
| NE555 |  ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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