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NCE05N60 даташитФункция этой детали – «N-channel Super Junction Power Mosfet». |
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Номер в каталоге | Производители | Описание | |
NCE05N60 | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET NCE05N60D,NCE05N60, NCE05N60F
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requireme |
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NCE05N60D | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET |
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NCE05N60F | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET |
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NCE05N60I | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET NCE05N60I,NCE05N60K
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100 |
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NCE05N60K | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET |
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NCE05N60L | ![]() NCE Power Semiconductor |
N-Channel Super Junction Power MOSFET NCE05N60L
N-Channel Super Junction Power MOSFET
General Description
The series of devices use advanced super junction
technology and design to provide excellent RDS(ON) with low gate charge. This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.
Features
●New technology for high voltage device ●Low on-resistance and low conduction losses ●Small package ●Ultra Low Gate Charge cause lower driving requirements ●100% Avalanche |
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Последние обновления

Номер в каталоге | Производители | Описание | |
2N3904 | ![]() Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ![]() ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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DataSheet26.com | 2020 | Контакты |