|
NCE85H21TC даташитФункция этой детали – «N-channel Enhancement Mode Power Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NCE85H21TC | NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE85H21TC
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE85H21TC uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in automotive applications and a wide variety of other applications.
General Features
● VDSS =85V,ID =210A RDS(ON) < 3.9mΩ @ VGS=10V
● Good stability and uniformity with high EAS ● Special process technology for high ESD capability ● High density cell design for ultra low Rdson � |
Это результат поиска, начинающийся с "85H21TC", "NCE85H2" |
Номер в каталоге | Производители | Описание | |
A9N18521 | Schneider |
MCB Free Datasheet http:///
|
|
AZ8521 | American Zettler |
SUBMINIATURE SIGNAL RELAY AZ8521
SUBMINIATURE SIGNAL RELAY
FEATURES
• Conforms to IEC60950/EN41003 spacing and high breakdown voltage
• Monostable and bistable (latching) coil versions available • High dielectric and surge voltage:
2.5 KV surge (per FCC Part 68) and meets Telcordia • Low power con |
|
BL8521 | SHANGHAI BELLING |
3A Synchronous Buck Converter BL8521
5.5V, 1.4MHz, 3A Synchronous Buck Converter
DESCRIPTION
The BL8521 is a synchronous, 1.4MHz, fix frequency PWM Buck converter. It is ideal for powering portable equipment that powered by a single cell Lithium-ion batter, or USB port.
The BL8521 can provide up to 3A of lo |
|
DGB8521 | American Microsemiconductor |
Diode ( Rectifier ) |
|
FDR8521L | Fairchild Semiconductor |
P-Channel MOSFET With Gate Driver For Load Switch Application FDR8521L
August 2000
FDR8521L
P-Channel MOSFET With Gate Driver For Load Switch Application
General Description
This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed |
|
HYS72D128521GR-7-B | Infineon |
Registered DDR SDRAM-Modules |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |