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NCE9926 даташит

Функция этой детали – «Nce N-channel Enhancement Mode Power Mosfet».



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Номер в каталоге Производители Описание PDF
NCE9926 NCE Power Semiconductor
NCE Power Semiconductor
  NCE N-Channel Enhancement Mode Power MOSFET

http://www.ncepower.com Pb Free Product NCE9926 NCE N-Channel Enhancement Mode Power MOSFET Description The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current Application ● Power switching application
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Это результат поиска, начинающийся с "9926", "NCE9"

Номер в каталоге Производители Описание PDF
9926A Fairchild Semiconductor
Fairchild Semiconductor

FDW9926A

FDW9926A March 2005 FDW9926A Dual N-Channel 2.5V Specified PowerTrench® MOSFET General Description This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power
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9926A Tuofeng Semiconductor
Tuofeng Semiconductor

Dual N-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Conti
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9926B Tuofeng Semiconductor
Tuofeng Semiconductor

Dual N-Channel MOSFET

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET Dual N-Channel MOSFET 9926B Features 6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V. Absolute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Voltage Co
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AF9926N Anachip
Anachip

N-Channel Enhancement Mode Power MOSFET

N-Channel Enhancement Mode Power MOSFET AF9926N „ Features - Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggediz
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AO9926 Alpha Industries
Alpha Industries

Dual N-Channel Enhancement Mode Field Effect Transistor

Feb 2003 AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used
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AO9926A ETC
ETC

Dual N-Channel Enhancement Mode Field Effect Transistor

Jan 2003 AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be us
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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