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NCE9926 даташитФункция этой детали – «Nce N-channel Enhancement Mode Power Mosfet». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NCE9926 | NCE Power Semiconductor |
NCE N-Channel Enhancement Mode Power MOSFET http://www.ncepower.com
Pb Free Product
NCE9926
NCE N-Channel Enhancement Mode Power MOSFET
Description
The NCE9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
General Features
● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V
Schematic diagram
● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current
Application
● Power switching application |
Это результат поиска, начинающийся с "9926", "NCE9" |
Номер в каталоге | Производители | Описание | |
9926A | Fairchild Semiconductor |
FDW9926A
FDW9926A
March 2005
FDW9926A
Dual N-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This N-Channel 2.5V specified MOSFET is a rugged gate version of Fairchild's Semiconductor’s advanced PowerTrench process. It has been optimized for power |
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9926A | Tuofeng Semiconductor |
Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET 9926A
Features
6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage Conti |
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9926B | Tuofeng Semiconductor |
Dual N-Channel MOSFET Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter Drain-Source Voltage Gate-Source Voltage
Co |
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AF9926N | Anachip |
N-Channel Enhancement Mode Power MOSFET N-Channel Enhancement Mode Power MOSFET
AF9926N
Features
- Capable of 2.5V Gate Drive - Low On-resistance - Low Drive Current - Surface Mount Package
General Description
The advanced power MOSFET provides the designer with the best combination of fast switching, ruggediz |
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AO9926 | Alpha Industries |
Dual N-Channel Enhancement Mode Field Effect Transistor Feb 2003
AO9926 Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be used |
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AO9926A | ETC |
Dual N-Channel Enhancement Mode Field Effect Transistor Jan 2003
AO9926A Dual N-Channel Enhancement Mode Field Effect Transistor
General Description
The AO9926A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 8V. The two devices may be us |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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