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NCP1508 даташитФункция этой детали – «High EffICiency Synchronous Step-down Dc-dc Converter». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NCP1508 | ON Semiconductor |
High Efficiency Synchronous Step-Down DC-DC Converter
NCP1508 Up to 500 mA, 1 MHz, High Efficiency Synchronous Step−Down DC−DC Converter in DFN Package
The NCP1508 step−down PWM DC−DC converter is optimized for portable applications powered from 1−cell Li−ion or 3 cell Alkaline/NiCd/NiMH batteries. This DC−DC converter utilizes a current−mode control architecture for easy compensation and better line regulation. It also uses synchronous rectification to increase efficiency and reduce external part count. The NCP1508 optimizes efficiency |
Это результат поиска, начинающийся с "1508", "NCP1" |
Номер в каталоге | Производители | Описание | |
1508 | American Microsemiconductor |
Diode ( Rectifier ) |
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2SB1508 | Sanyo Semicon Device |
PNP/NPN Epitaxial Planar Silicon Transistors Ordering number:EN3714
PNP/NPN Epitaxial Planar Silicon Transistors
2SB1508/2SD2281
50V/12A High-Current Switching Applications
Applications
· Relay drivers, high-speed inverters, converters.
Features
· Low collector-to-emitter saturation voltage : VCE(sat)=–0.5V (PNP), 0.4 |
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2SB1508 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1508
DESCRIPTION ·With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2281 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,hig |
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2SD1508 | Toshiba Semiconductor |
Silicon NPN Epitaxial Type TRANSISTOR 2SD1508
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1508
Pulse Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
• High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 m |
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2SK1508 | Fuji Electric |
N-channel MOS-FET 2SK1508
F-III Series
> Features
High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance
N-channel MOS-FET
60V
0,035Ω 35A
60W
> Outline Drawing
> Applications
- Motor Control - General Purpose Power Amplifier - DC-DC converters
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ABR1508 | EIC discrete Semiconductors |
AVALANCHE BRIDGE RECTIFIERS ABR1500 - ABR1510
PRV : 50 - 1000 Volts Io : 15 Amperes
FEATURES :
* * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop ldeal for printed circuit board
AVALANCHE BRIDGE RECTIFIERS
BR50
0.728(18.50) |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |