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NCP5218 даташитФункция этой детали – «2-in-1 Notebook Ddr Power Controller». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NCP5218 | ON Semiconductor |
2-in-1 Notebook DDR Power Controller NCP5218 2−in−1 Notebook DDR Power Controller
The NCP5218 2−in−1 Notebook DDR Power Controller is specifically designed as a total power solution for notebook DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulators for the VTT termination voltage and the buffered low noise reference. This IC contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The DDR memory termination re |
Это результат поиска, начинающийся с "5218", "NCP5" |
Номер в каталоге | Производители | Описание | |
2N5218 | SSDI |
NPN Transistor 10 AMP NPN(continued)
Sorted by IC, then VCEO
Part Number
mIaCx (A)
mVCaExO (V)
Ratings based on 25˚C case temperature unless otherwise specified
mhFiEn
mhaFEx
@Ic (A)
VmCEa(sxat) (V)
@(A)IC
mfTin (MHz)
mPaTx
*TC=100°C
(W)
Package
2N1904
10
100 20 60 Note 1 1
No |
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2SC5218 | Hitachi Semiconductor |
Silicon NPN Epitaxial 2SC5218
Silicon NPN Epitaxial
ADE-208-279 1st. Edition
Application
VHF / UHF wide band amplifier
Features
• High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz
Outline
MPAK
3 1 2
1. Emitter 2. Base 3. |
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2SC5218 | Inchange Semiconductor |
Silicon NPN Transistor INCHANGE Semiconductor
isc Silicon NPN RF Transistor
isc RF Product Specification
2SC5218
DESCRIPTION ·High Gain Bandwidth Product
fT = 9 GHz TYP. ·High Gain, Low Noise Figure
PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz
APPLICATIONS ·Designed for use in VHF ~ UHF ampli |
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2SC5218 | Renesas |
Silicon NPN Epitaxial To all our customers
Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003 |
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75218xxxxxx | CTS Corporation |
752 Series Surface Mount Surface Mount Series 752
N N-1
DataShe
(Ohms) EIA Code
10 12 15 18 22 27 33 39 47 51 56 68 82 100 110 120 150 180 200 220 270 330 390 470 510 560 680 820 1000 1100 1200 1500 1800 2000 2200 2700 100 120 150 180 220 270 330 390 470 510 560 680 820 101 111 121 151 181 201 221 271 |
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ATF-52189 | AVAGO |
High Linearity Mode Enhancement Pseudomorphic HEMT ATF-52189
High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package
Data Sheet
Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a mediu |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |