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NCP5218 даташит

Функция этой детали – «2-in-1 Notebook Ddr Power Controller».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NCP5218 ON Semiconductor
ON Semiconductor
  2-in-1 Notebook DDR Power Controller

NCP5218 2−in−1 Notebook DDR Power Controller The NCP5218 2−in−1 Notebook DDR Power Controller is specifically designed as a total power solution for notebook DDR memory system. This IC combines the efficiency of a PWM controller for the VDDQ supply with the simplicity of linear regulators for the VTT termination voltage and the buffered low noise reference. This IC contains a synchronous PWM buck controller for driving two external NFETs to form the DDR memory supply voltage (VDDQ). The DDR memory termination re
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Это результат поиска, начинающийся с "5218", "NCP5"

Номер в каталоге Производители Описание PDF
2N5218 SSDI
SSDI

NPN Transistor

10 AMP NPN(continued) Sorted by IC, then VCEO Part Number mIaCx (A) mVCaExO (V) Ratings based on 25˚C case temperature unless otherwise specified mhFiEn mhaFEx @Ic (A) VmCEa(sxat) (V) @(A)IC mfTin (MHz) mPaTx *TC=100°C (W) Package 2N1904 10 100 20 60 Note 1 1 No
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2SC5218 Hitachi Semiconductor
Hitachi Semiconductor

Silicon NPN Epitaxial

2SC5218 Silicon NPN Epitaxial ADE-208-279 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 9 GHz typ • High gain, low noise figure PG = 13.0 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline MPAK 3 1 2 1. Emitter 2. Base 3.
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2SC5218 Inchange Semiconductor
Inchange Semiconductor

Silicon NPN Transistor

INCHANGE Semiconductor isc Silicon NPN RF Transistor isc RF Product Specification 2SC5218 DESCRIPTION ·High Gain Bandwidth Product fT = 9 GHz TYP. ·High Gain, Low Noise Figure PG = 13.0 dB TYP., NF = 1.2 dB TYP @ f = 900 MHz APPLICATIONS ·Designed for use in VHF ~ UHF ampli
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2SC5218 Renesas
Renesas

Silicon NPN Epitaxial

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003
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75218xxxxxx CTS Corporation
CTS Corporation

752 Series Surface Mount

Surface Mount Series 752 N N-1 DataShe (Ohms) EIA Code 10 12 15 18 22 27 33 39 47 51 56 68 82 100 110 120 150 180 200 220 270 330 390 470 510 560 680 820 1000 1100 1200 1500 1800 2000 2200 2700 100 120 150 180 220 270 330 390 470 510 560 680 820 101 111 121 151 181 201 221 271
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ATF-52189 AVAGO
AVAGO

High Linearity Mode Enhancement Pseudomorphic HEMT

ATF-52189 High Linearity Mode[1] Enhancement Pseudomorphic HEMT in SOT 89 Package Data Sheet Description Avago Technologies’s ATF-52189 is a single-voltage high linearity, low noise E-pHEMT FET packaged in a low cost surface mount SOT89 package. The device is ideal as a mediu
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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