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NDP4060L даташитФункция этой детали – «N-channel LogIC Level Enhancement Mode Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDP4060L | Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low vo |
Это результат поиска, начинающийся с "4060L", "NDP40" |
Номер в каталоге | Производители | Описание | |
AD14060L | Analog Devices |
Quad-SHARC DSP Multiprocessor Family PERFORMANCE FEATURES
ADSP-21060 core processor ( × 4) 480 MFLOPS peak, 320 MFLOPS sustained 25 ns instruction rate, single-cycle
instruction execution—each of four processors 16 Mbit shared SRAM (internal to SHARCs) 4 gigawords addressable off-module memory Twelve 40 Mbyte/s l |
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CEB4060L | Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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CEP4060L | Chino-Excel Technology |
N-Channel Enhancement Mode Field Effect Transistor |
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NDB4060L | Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor April 1996
NDP4060L / NDB4060L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very |
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1N4060 | Microsemi Corporation |
HIGH VOLTAGE TEMPERATURE COMPENSATED ZENER DIODES |
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1N4060 | Compensated Deuices Incorporated |
12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% • 12.4 THRU 200 VOLT NOMINAL ZENER VOLTAGES + 5% • TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • EFFECTIVE TEMPERATURE COEFFICIENTS OF 0.005%/°C AND 0.002%/°C • HERMETICALLY SEALED, METALLURGICALLY BONDED, DOUBLE PLUG SUBASSEMBLIES ENCAPSULATED IN A PLASTIC CASE
1N4 |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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