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NDS332P даташитФункция этой детали – «P-channel LogIC Level Enhancement Mode Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDS332P | Fairchild |
P-Channel Logic Level Enhancement Mode Field Effect Transistor June 1997
NDS332P P-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These P-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as notebook computer power management, portable electronics, and other battery powered circuits where fast |
Это результат поиска, начинающийся с "332P", "NDS3" |
Номер в каталоге | Производители | Описание | |
80D332P063JE2D | Capacitors |
(80D Type) Aluminu |
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80D332P063JE2D | Vishay Intertechnology |
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FA5332P | Fuji Electric |
Bipolar IC For Power Factor Correction FA5331P(M)/FA5332P(M) FA5331P(M)/FA5332P(M)
s Description
FA5331P(M) and FA5332P(M) are control ICs for a power factor correction system. These ICs use the average current control system to ensure stable operation. With this system, a power factor of 99% or better can be achieved |
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FA5332PM | Fuji Electric |
Bipolar IC For Power Factor Correction FA5331P(M)/FA5332P(M) FA5331P(M)/FA5332P(M)
s Description
FA5331P(M) and FA5332P(M) are control ICs for a power factor correction system. These ICs use the average current control system to ensure stable operation. With this system, a power factor of 99% or better can be achieved |
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FDG332PZ | Fairchild Semiconductor |
MOSFET ( Transistor ) FDG332PZ P-Channel PowerTrench® MOSFET
FDG332PZ
P-Channel PowerTrench® MOSFET
-20V, -2.6A, 97m:
December 2008
tm
Features
Max rDS(on) = 95m: at VGS = -4.5V, ID = -2.6A Max rDS(on) = 115m: at VGS = -2.5V, ID = -2.2A Max rDS(on) = 160m: at VGS = -1.8V, ID = -1.9A |
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FTLX3813M332P | Finisar Corporation |
10Gb/s DWDM XFP Optical Transceiver Finisar
Product Specification
Multiprotocol, 80km, 10Gb/s DWDM XFP Optical Transceiver FTLX3813M3xx
PRODUCT FEATURES
• Supports 8.5Gb/s to 11.32Gb/s • Hot-pluggable XFP footprint • Temperature-stabilized DWDM EML
transmitter • RoHS-6 Compliant (lead-free) • 100GHz ITU |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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