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NDS9958 даташитФункция этой детали – «Dual N & P-channel Enhancement Mode Field Effect». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDS9958 | Fairchild |
Dual N & P-Channel Enhancement Mode Field Effect Transistor February 1996
NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor
General Description
These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage applications |
Это результат поиска, начинающийся с "9958", "NDS9" |
Номер в каталоге | Производители | Описание | |
AD9958 | Analog Devices |
500 MSPS DDS Data Sheet
FEATURES
2 synchronized DDS channels @ 500 MSPS Independent frequency/phase/amplitude control between
channels Matched latencies for frequency/phase/amplitude changes Excellent channel-to-channel isolation (>72 dB) Linear frequency/phase/amplitude sweeping capability U |
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FDS9958 | Fairchild Semiconductor |
Dual P-Channel MOSFET FDS9958 Dual P-Channel PowerTrench® MOSFET
July 2007
FDS9958
Dual P-Channel PowerTrench MOSFET
-60V, -2.9A, 105mΩ
Features
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A RoHS Compliant
®
tm
General Description
Thes |
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FDS9958_F085 | Fairchild Semiconductor |
Dual P-Channel PowerTrench MOSFET FDS9958_F085 Dual P-Channel PowerTrench® MOSFET
November 2008
FDS9958_F085
Dual P-Channel PowerTrench® MOSFET
-60V, -2.9A, 105mΩ
Features
General Description
Max rDS(on) =105mΩ at VGS = -10V, ID = -2.9A Max rDS(on) =135mΩ at VGS = -4.5V, ID = -2.5A Qualified |
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HS00-99586 | Bi technologies |
T1/CEPT/ISDN-Pri Telecom Products
Electrical / Environmental
T1/CEPT/ISDN-Pri Telecom Products
S RoH nt for
lia Comp dels o ‘LF’ M
• • • • •
Meets the required 1500 Vrms line isolation Standard Operating Temperature Range 0°C to +70°C Extended Operating Tempe |
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L9958 | STMicroelectronics |
Low RDSON SPI controlled H-Bridge L9958
Low RDSON SPI controlled H-Bridge
'!0'03
PowerSO-20
'!0'03
PowerSSO24
'!0'03
PowerSO16
Features
Programmable current regulation peak threshold by SPI up to 8.6 A typ.
Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage |
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L9958SB | STMicroelectronics |
Low RDSON SPI controlled H-Bridge L9958
Low RDSON SPI controlled H-Bridge
'!0'03
PowerSO-20
'!0'03
PowerSSO24
'!0'03
PowerSO16
Features
Programmable current regulation peak threshold by SPI up to 8.6 A typ.
Operating battery supply voltage 4.0 V to 28 V Operating Vdd supply voltage |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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