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NDT014L даташитФункция этой детали – «N-channel LogIC Level Enhancement Mode Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDT014L | Fairchild |
N-Channel Logic Level Enhancement Mode Field Effect Transistor August 1996
NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications |
Это результат поиска, начинающийся с "014L", "NDT0" |
Номер в каталоге | Производители | Описание | |
APT5014LLC | Advanced Power Technology |
Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs. APT5014B2LC APT5014LLC
500V 37A 0.140W
B2LC
POWER MOS VITM
Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate ch |
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APT5014LVR | Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT5014LVR
500V 37A 0.140Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit |
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APT8014L2FLL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8014L2FLL
800V 52A 0.140W
POWER MOS 7TM
FREDFET
TO-264 Max
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. |
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APT8014L2LL | Advanced Power Technology |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. APT8014L2LL
800V 52A 0.140W
POWER MOS 7TM
Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines |
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DMN2014LHAB | Diodes |
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION
DMN2014LHAB
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(on) max
13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V
ID TA = +25°C
9.0A
8.7A
8.0A
6.7A
6.3A
Description
This new g |
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DMT10H014LSS | Diodes |
N-CHANNEL ENHANCEMENT MODE MOSFET A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT
DMT10H014LSS
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BVDSS 100V
RDS(ON) Max 14mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V
ID TA = +25°C
8.9A
7.9A
Features and Benefits
100% Unclamped Inductive Switch (UIS) Test |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |