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NDT014L даташит

Функция этой детали – «N-channel LogIC Level Enhancement Mode Field Effect Transistor».



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Номер в каталоге Производители Описание PDF
NDT014L Fairchild
Fairchild
  N-Channel Logic Level Enhancement Mode Field Effect Transistor

August 1996 NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.This very high density process is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.Thesedevices are particularly suited for low voltage applications
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Это результат поиска, начинающийся с "014L", "NDT0"

Номер в каталоге Производители Описание PDF
APT5014LLC Advanced Power Technology
Advanced Power Technology

Power MOS VITM is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs.

APT5014B2LC APT5014LLC 500V 37A 0.140W B2LC POWER MOS VITM Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate ch
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APT5014LVR Advanced Power Technology
Advanced Power Technology

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT5014LVR 500V 37A 0.140Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster swit
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APT8014L2FLL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT8014L2FLL 800V 52A 0.140W POWER MOS 7TM FREDFET TO-264 Max Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg.
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APT8014L2LL Advanced Power Technology
Advanced Power Technology

Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.

APT8014L2LL 800V 52A 0.140W POWER MOS 7TM Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS(ON) and Qg. Power MOS 7TM combines
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DMN2014LHAB Diodes
Diodes

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

ADVANCE INFORMATION DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(on) max 13mΩ @ VGS = 4.5V 14mΩ @ VGS = 4.0V 17mΩ @ VGS = 3.1V 18mΩ @ VGS = 2.5V 28mΩ @ VGS = 1.8V ID TA = +25°C 9.0A 8.7A 8.0A 6.7A 6.3A Description This new g
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DMT10H014LSS Diodes
Diodes

N-CHANNEL ENHANCEMENT MODE MOSFET

A DAVDAVNACNECDEI INNNEFFOWORRPMRMAOATDIT IUOOCNNT DMT10H014LSS 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 100V RDS(ON) Max 14mΩ @ VGS = 10V 18mΩ @ VGS = 6.0V ID TA = +25°C 8.9A 7.9A Features and Benefits  100% Unclamped Inductive Switch (UIS) Test
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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