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NDT03N40Z даташитФункция этой детали – «N-channel Power Mosfet / Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDT03N40Z | ON Semiconductor |
N-Channel Power MOSFET / Transistor NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol NDD NDT Unit
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current Steady St |
Это результат поиска, начинающийся с "03N40Z", "NDT03N" |
Номер в каталоге | Производители | Описание | |
NDD03N40Z | ON Semiconductor |
N-Channel Power MOSFET / Transistor NDD03N40Z, NDT03N40Z
N-Channel Power MOSFET 400 V, 3.4 W
Features
• 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devic |
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ASB00340 | Anachip |
SMD Schottky Barrier Diode ASB00340
SMD Schottky Barrier Diode Features
IO = 30mA
VR = 40V
- Designed for mounting on small surface. - Extremely thin package. - Low capacitance. - Majority carrier conduction - Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.028(0.70)
General Description
0603(1608)
0.071(1. |
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ASB0340 | Anachip |
SMD Schottky Barrier Diode ASB0320/30/40
SMD Schottky Barrier Diode Features
IO = 350mA
VR = 20V to 40V
- Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device
0.010(0.25)Typ. 0.033(0.85) 0.027(0.70)
General Description
06 |
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BP60340 | Vanlong Technology |
SAW Filter 70 MHz Bandpass SAW Filter
70 MHz Bandpass SAW Filter
2.5 MHz Bandwidth
Complies with Directive 2002/95/EC (RoHS Compliant)
BP60340
Specifications
Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband |
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CDBER00340 | Comchip |
SMD Schottky Barrier Diode SMD Schottky Barrier Diode
CDBER00340
I o = 30 mA V R = 40 Volts RoHS Device
Features
-Designed for mounting on small surface. -Extremely thin package. -Low stored charge. -Majority carrier conduction.
0.034(0.85) 0.026(0.65)
0503/SOD-723F
0.053(1.35) 0.045(1.15)
Mechanical da |
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CDBF00340 | Comchip Technology |
SMD Schottky Barrier Diode SMD Schottky Barrier Diode
COMCHIP
www.comchip.com.tw
CDBF00340
Io = 3 0 mA V R = 40 Volt s Features
(Lead-free Device)
Designed for mounting on small surface. Extremely thin/leadless package. Low capacitance. Majority carrier conduction.
0.051(1.30) 0.043(1.10)
1005(2512)
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |