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NDT03N40Z даташит

Функция этой детали – «N-channel Power Mosfet / Transistor».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NDT03N40Z ON Semiconductor
ON Semiconductor
  N-Channel Power MOSFET / Transistor

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol NDD NDT Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current Steady St
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Это результат поиска, начинающийся с "03N40Z", "NDT03N"

Номер в каталоге Производители Описание PDF
NDD03N40Z ON Semiconductor
ON Semiconductor

N-Channel Power MOSFET / Transistor

NDD03N40Z, NDT03N40Z N-Channel Power MOSFET 400 V, 3.4 W Features • 100% Avalanche Tested • Extremely High dv/dt Capability • Gate Charge Minimized • Very Low Intrinsic Capacitance • Improved Diode Reverse Recovery Characteristics • Zener−protected • These Devic
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ASB00340 Anachip
Anachip

SMD Schottky Barrier Diode

ASB00340 SMD Schottky Barrier Diode Features IO = 30mA VR = 40V - Designed for mounting on small surface. - Extremely thin package. - Low capacitance. - Majority carrier conduction - Lead-free device 0.010(0.25)Typ. 0.033(0.85) 0.028(0.70) General Description 0603(1608) 0.071(1.
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ASB0340 Anachip
Anachip

SMD Schottky Barrier Diode

ASB0320/30/40 SMD Schottky Barrier Diode Features IO = 350mA VR = 20V to 40V - Low forward voltage - Designed for mounting on small surface. - Extremely thin package. - Majority carrier conduction. - Lead-free device 0.010(0.25)Typ. 0.033(0.85) 0.027(0.70) General Description 06
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BP60340 Vanlong Technology
Vanlong Technology

SAW Filter

70 MHz Bandpass SAW Filter 70 MHz Bandpass SAW Filter 2.5 MHz Bandwidth Complies with Directive 2002/95/EC (RoHS Compliant) BP60340 Specifications Parameter Center Frequency at 25°C Insertion Loss at fc 1 dB Bandwidth 3 dB Bandwidth 40dB Bandwidth Passband
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CDBER00340 Comchip
Comchip

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode CDBER00340 I o = 30 mA V R = 40 Volts RoHS Device Features -Designed for mounting on small surface. -Extremely thin package. -Low stored charge. -Majority carrier conduction. 0.034(0.85) 0.026(0.65) 0503/SOD-723F 0.053(1.35) 0.045(1.15) Mechanical da
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CDBF00340 Comchip Technology
Comchip Technology

SMD Schottky Barrier Diode

SMD Schottky Barrier Diode COMCHIP www.comchip.com.tw CDBF00340 Io = 3 0 mA V R = 40 Volt s Features (Lead-free Device) Designed for mounting on small surface. Extremely thin/leadless package. Low capacitance. Majority carrier conduction. 0.051(1.30) 0.043(1.10) 1005(2512) 0
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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