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NDT2955 даташитФункция этой детали – «P-channel Enhancement Mode Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NDT2955 | Fairchild |
P-Channel Enhancement Mode Field Effect Transistor September 1996
NDT2955 P-Channel Enhancement Mode Field Effect Transistor
General Description
Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control.
Features
-2.5A, -60 |
Это результат поиска, начинающийся с "2955", "NDT2" |
Номер в каталоге | Производители | Описание | |
2N2955 | Unisonic Technologies |
SILICON PNP TRANSISTOR UTC 2N2955
SILICON PNP TRANSISTORS
The UTC 2N2955 is a silicon PNP transistor in TO-3
SILICON PNP TRANSISTOR
metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
TO-3
ABSOLUTE MAXIMUM RATINGS ( Ta=25 |
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2N2955 | Dc Components |
PNP EPITAXIAL PLANAR TRANSISTOR DC COMPONENTS CO., LTD.
R
2N2955
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers.
TO-3
1.573 Max (39.96) .875(22.23) |
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2N2955HV | Inchange Semiconductor |
Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistors
isc Product Specification
2N2955HV
DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain-
: hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV
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2SK2955 | Hitachi Semiconductor |
Silicon N Channel MOS FET High Speed Power Switching 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-564B (Z) 3rd. Edition Jun 1998 Features
• Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source
Outline
TO–3P
D
G
1
S
2
3
1. Gate 2. D |
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2SK2955 | Renesas |
Silicon N Channel MOS FET 2SK2955
Silicon N Channel MOS FET High Speed Power Switching
REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005
Features
• Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Packag |
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B39389-K2955-M100 | EPCOS |
IF Filter for Intercarrier Applications SAW Components
Data Sheet K 2955 M
SAW Components IF Filter for Intercarrier Applications Data Sheet
Standard
s B/G s D/K
K 2955 M 38,90 MHz
Plastic package SIP5K
Features
s TV IF filter with Nyquist slope and sound shelf s Broad sound shelf for sound carriers at 32,40
MHz an |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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