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NDT2955 даташит

Функция этой детали – «P-channel Enhancement Mode Field Effect Transistor».



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Номер в каталоге Производители Описание PDF
NDT2955 Fairchild
Fairchild
  P-Channel Enhancement Mode Field Effect Transistor

September 1996 NDT2955 P-Channel Enhancement Mode Field Effect Transistor General Description Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook computer power management and DC motor control. Features -2.5A, -60
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Это результат поиска, начинающийся с "2955", "NDT2"

Номер в каталоге Производители Описание PDF
2N2955 Unisonic Technologies
Unisonic Technologies

SILICON PNP TRANSISTOR

UTC 2N2955 SILICON PNP TRANSISTORS The UTC 2N2955 is a silicon PNP transistor in TO-3 SILICON PNP TRANSISTOR metal case. It is intended for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 ABSOLUTE MAXIMUM RATINGS ( Ta=25
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2N2955 Dc Components
Dc Components

PNP EPITAXIAL PLANAR TRANSISTOR

DC COMPONENTS CO., LTD. R 2N2955 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for power switching circuits, series and shunt regulators, output stages and high fidelity amplifiers. TO-3 1.573 Max (39.96) .875(22.23)
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2N2955HV Inchange Semiconductor
Inchange Semiconductor

Silicon PNP Power Transistor

INCHANGE Semiconductor isc Silicon PNP Power Transistors isc Product Specification 2N2955HV DESCRIPTION ·Excellent Safe Operating Area ·DC Current Gain- : hFE=20-70@IC= -4A ·Collector-Emitter Saturation Voltage- : VCE(sat)= -1.1V(Max)@ IC= -4A ·Complement to Type 2N3055HV
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2SK2955 Hitachi Semiconductor
Hitachi Semiconductor

Silicon N Channel MOS FET High Speed Power Switching

2SK2955 Silicon N Channel MOS FET High Speed Power Switching ADE-208-564B (Z) 3rd. Edition Jun 1998 Features • Low on-resistance R DS =0.010 Ω typ. • High speed switching • 4V gate drive device can be driven from 5V source Outline TO–3P D G 1 S 2 3 1. Gate 2. D
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2SK2955 Renesas
Renesas

Silicon N Channel MOS FET

2SK2955 Silicon N Channel MOS FET High Speed Power Switching REJ03G1055-0400 (Previous: ADE-208-564B) Rev.4.00 Sep 07, 2005 Features • Low on-resistance RDS =0.010 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Packag
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B39389-K2955-M100 EPCOS
EPCOS

IF Filter for Intercarrier Applications

SAW Components Data Sheet K 2955 M SAW Components IF Filter for Intercarrier Applications Data Sheet Standard s B/G s D/K K 2955 M 38,90 MHz Plastic package SIP5K Features s TV IF filter with Nyquist slope and sound shelf s Broad sound shelf for sound carriers at 32,40 MHz an
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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