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Datasheet NE321000 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NE321000 | C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
NE321000
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable |
 NEC |
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| 1 | NE321000 | ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
ULTRA LOW NOISE PSEUDOMORPHIC HJ FET
FEATURES
• SUPER LOW NOISE FIGURE: 0.35 dB Typ at f = 12 GHz
Noise Figure, NF (dB)
NE321000
NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT
VDS = 2 V f = 12 GHz 15 GA 14 13 2.0 1.5 1.0 0.5 NF 0 10 20 30 12 11
• GATE LENGTH: ≤0.2 µm |
 CEL |
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