|
NE33284A-T1A даташитФункция этой детали – «L To X Band Super Low Noise Amplifier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NE33284A-T1A | NEC |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for GPS, TVRO and another commercial systems.
L 1.78 ±0.2 1
PACKAGE DIMENSIONS (Unit: mm)
FEATURES
• Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP., Ga = 15.0 dB TYP. at f = 4 GHz • Gate Width: Wg = |
Это результат поиска, начинающийся с "33284A", "NE33284A-" |
Номер в каталоге | Производители | Описание | |
NE33284A | NEC |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated |
|
NE33284A-SL | NEC |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated |
|
NE33284A-T1 | NEC |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE33284A
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
DESCRIPTION
The NE33284A is a Herero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated |
|
MC33284 | Motorola Semiconductors |
(MC33282 / MC33284) HIGH PERFORMANCE OPERATIONAL AMPLIFIERS Order this document by MC33282/D
MC33282 MC33284
Low Input Offset, High Slew Rate, Wide Bandwidth, JFET Input Operational Amplifiers
The MC33282/284 series of high performance operational amplifiers are quality fabricated with innovative bipolar and JFET design concepts. This d |
|
NE33284 | NEC |
L to X BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |