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Datasheet NE52118 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 2 | NE52118 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = |
 NEC |
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| 1 | NE52118-T1 | L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT PRELIMINARY DATA SHEET
GaAs HETEROJUNCTION BIPOLAR TRANSISTOR
NE52118
L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT
FEATURES
• For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. (@f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω) OIP3 = 15 dBm TYP. (@f = |
NEC |
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