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NE680 даташитФункция этой детали – «Necs NPN SilICon High Frequency Transistor». |
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Номер в каталоге | Производители | Описание | |
NE680 | NEC |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
00 (CHIP)
NE680 SERIES
E B
35 (MICRO-X)
NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also a |
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NE680 | CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable f |
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NE68000 | CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE68018 | NEC |
NONLINEAR MODEL NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LC LBX Base LB CCE LCX Collector
NE68018
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 3.84e-16 124.9 1.05 11.9 0.027 1.0e-14 2.17 1 1.05 Infinity Infinity 0 2 0.6 17.9 1.02 4.01e-4 10.46 0.358e-12 0.71 0.5 0.162e-12 0.79 Parameters MJC XCJC CJS VJS MJS FC TF XTF VTF ITF PTF TR EG XTB XTI KF AF Q1 0.64 0 0 0.75 0 0.5 8.7e-12 18 19.1 0.082 0 0.635e-9 1.11 0 3 0 |
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NE68018 | CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable f |
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NE68018-T1 | NEC |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
00 (CHIP)
NE680 SERIES
E B
35 (MICRO-X)
NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also a |
|
NE68019 | CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR NoiseDFigure,INF(dB)SCONTINUED Associated Gain, GA (dB)
SILICON TRANSISTOR
NE680 SERIES
NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE:
1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
DESCRIPTION
The NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable f |
|
NE68019-T1 | NEC |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz 2.6 dB at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 8.0 dB at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE
00 (CHIP)
NE680 SERIES
E B
35 (MICRO-X)
NEC's NE680 series of NPN epitaxial silicon transistors is designed for low noise, high gain and low cost applications. Both the chip and micro-x versions are suitable for applications up to 6 GHz. The NE680 die is also a |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |