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Datasheet NE685 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | |
8 | NE685 | SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• LOW COST • SMALL AND ULTRA SMALL SIZE PACKAGES • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH GAIN BANDWIDTH PRODUCT: fT of 12 GHz • NOISE FIGURES OF 1.5 dB AT 2.0 GHZ
NE685 SERIES
rs e b m : u E n ot T t n O |
NEC |
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7 | NE68518 | NPN EPITAXIAL SILICON RF TRANSISTOR DATA SHEET
NPN EPITAXIAL SILICON RF TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION 4-PIN SUPER MINIMOLD (18)
NE68518 / 2SC5015
NPN SILICON RF TRANSISTOR
FEATURES
• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz • Low voltage operation • Low noise and high gain
• 4- |
CEL |
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6 | NE68518 | NONLINEAR MODEL NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LCX LBX Base LB LC CCE Collector
NE68518
Q1
CBEPKG
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7e-16 109 1 15 0.19 7.9e-13 2.19 1 1.08 12.4 Infini |
NEC |
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5 | NE68519 | NONLINEAR MODEL
NONLINEAR MODEL
SCHEMATIC
CCBPKG CCB LCX LBX Base LB CCE Collector
NE68519
Q1
LE
CCEPKG
LEX
Emitter
BJT NONLINEAR MODEL PARAMETERS (1)
Parameters IS BF NF VAF IKF ISE NE BR NR VAR IKR ISC NC RE RB RBM IRB RC CJE VJE MJE CJC VJC Q1 7.0e-16 109 1 15 0.19 7.90e-13 2.19 1 1.0 |
NEC |
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Número de pieza | Descripción | Fabricantes | |
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Sanken |
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