DataSheet26.com


NEZ4450-4DD даташит

Функция этой детали – «4w/8w C-band Power Gaas Fet N-channel Gaas Mes».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
NEZ4450-4DD NEC
NEC
  4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s str
pdf

Это результат поиска, начинающийся с "4450", "NEZ4450-"

Номер в каталоге Производители Описание PDF
1N4450 GOOD-ARK Electronics
GOOD-ARK Electronics

SILICON EPITAXIAL PLANAR DIODES

1N914 THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in .
pdf
1N4450 Semtech Corporation
Semtech Corporation

SILICON EPITAXIAL PLANAR DIODE

pdf
1N4450 Shanghai Lunsure Electronic Tech
Shanghai Lunsure Electronic Tech

SMALL SIGNAL SWITCHING DIODE

CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 1N914 THRU 1N4454 SMALL SIGNAL SWITCHING DIODE MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode
pdf
1N4450 CHENYI ELECTRONICS
CHENYI ELECTRONICS

SMALL SIGNAL SWITCHING DIODE

CE CHENYI ELECTRONICS FEATURES . Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34 MECHANICAL DATA . Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram 1N914 THRU 1N445
pdf
1N4450 EIC
EIC

HIGH SPEED SWITCHING DIODE

1N4450 FEATURES : • High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Certificate TH97/10561QM Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE
pdf
1N4450 Digitron Semiconductors
Digitron Semiconductors

SWITCHING RECTIFIER

1N4450 High-reliability discrete products and engineering services since 1977 SWITCHING RECTIFIER FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.  Available as non-RoHS (Sn/Pb plating),
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты