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NEZ4450-4DD даташитФункция этой детали – «4w/8w C-band Power Gaas Fet N-channel Gaas Mes». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NEZ4450-4DD | NEC |
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PRELIMINARY DATA SHEET
GaAs MES FET
4W/8W C-BAND POWER GaAs FET NEZ Series
4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
DESCRIPTION
The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band for microwave and satellite communications. Internal input and output circuits matched to 50 Ω are designed to provide good flatness of gain and output power in allocated band. To reduce the thermal resistance, the device has a PHS (Plated Heat Sink) structure. NEC’s str |
Это результат поиска, начинающийся с "4450", "NEZ4450-" |
Номер в каталоге | Производители | Описание | |
1N4450 | GOOD-ARK Electronics |
SILICON EPITAXIAL PLANAR DIODES 1N914 THRU 1N4454
SILICON EPITAXIAL PLANAR DIODES
Features
Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34.
D IM E N S IO N S D IM A B C D IM E N S IO N S D IM A B C D in c h e s M in . |
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1N4450 | Semtech Corporation |
SILICON EPITAXIAL PLANAR DIODE |
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1N4450 | Shanghai Lunsure Electronic Tech |
SMALL SIGNAL SWITCHING DIODE CE
CHENYI ELECTRONICS FEATURES
. Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also avaible in glass case DO-34
1N914 THRU 1N4454
SMALL SIGNAL SWITCHING DIODE
MECHANICAL DATA
. Case: DO-35 glass case . Polarity: Color brand denotes cathode |
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1N4450 | CHENYI ELECTRONICS |
SMALL SIGNAL SWITCHING DIODE CE
CHENYI ELECTRONICS
FEATURES
. Silicon epitaxial planar diode . Fast swithching diodes . 1N4149, 1N4447, 1N4449 are also
avaible in glass case DO-34
MECHANICAL DATA
. Case: DO-35 glass case . Polarity: Color brand denotes cathode end . Weight: Approx. 0.13gram
1N914 THRU 1N445 |
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1N4450 | EIC |
HIGH SPEED SWITCHING DIODE 1N4450
FEATURES :
• High switching speed: max. 4 ns • Reverse voltage:max. 30 V • Peak reverse voltage:max. 40 V • Pb / RoHS Free
MECHANICAL DATA :
Case: DO-35 Glass Case Weight: approx. 0.13g
Certificate TH97/10561QM
Certificate TW00/17276EM
HIGH SPEED SWITCHING DIODE |
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1N4450 | Digitron Semiconductors |
SWITCHING RECTIFIER 1N4450
High-reliability discrete products and engineering services since 1977
SWITCHING RECTIFIER
FEATURES Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. Available as non-RoHS (Sn/Pb plating), |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |