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NEZVN224Z5.5V12.5X8.5TRF даташитФункция этой детали – «PDF». |
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Номер в каталоге | Производители | Описание | |
NE-720 | NEC |
General Purpose GaAs MESFET |
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NE-72084 | NEC |
General Purpose GaAs MESFET |
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NE-808X | Manly |
Desktop SOHO Switch Ethernet Switch Product
NE-808X Desktop SOHO Switch
The NE-808X is designed for SOHO (Small Office/Home
Office) users. It is cost-effective, and space-saving for less than 8 users environment. The plug-and-play and auto-negotiation capabilities allow the Switch to auto-detect its link partner with automatically sense half or full duplex connections for high speed and the best speed. Each port provides Auto MDI/MDIX func tion and full bandwidth (Maximum with 200Mbps in full duplex mode) without traditi |
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NE021 | NEC |
NPN SILICON HIGH FREQUENCY TRANSISTOR |
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NE021 | NEC |
NPN Silicon High Frequency Transistor |
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NE021 | ETC |
NECs NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz
E
NE021 SERIES
• HIGH POWER GAIN: 12 dB at 2 GHz
B
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
s r e b m : u E n T t O r e a N r p a E S ng heet A i E w o l PL l as t o f a The this d ive: om omot 0 r f NE02135 r p 10 n 2 TYPICAL NOISE PARAMETERS o 0 n rs NE 2133 e b m u n NE0 2139 rt e a r 0 p a E g N n et i e w h s llo NE02139 a t o f a d TYPICAL NOISE PARAM |
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NE021 | CEL |
NPN SILICON HIGH FREQUENCY TRANSISTOR NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression
B E
NE021 SERIES
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in seve |
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NE02100 | NEC |
NPN Silicon High Frequency Transistor |
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |