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NEZVN224Z5.5V12.5X8.5TRF даташит

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Номер в каталоге Производители Описание PDF
NE-720 NEC
NEC
  General Purpose GaAs MESFET

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NE-72084 NEC
NEC
  General Purpose GaAs MESFET

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NE-808X Manly
Manly
  Desktop SOHO Switch

Ethernet Switch Product NE-808X Desktop SOHO Switch The NE-808X is designed for SOHO (Small Office/Home Office) users. It is cost-effective, and space-saving for less than 8 users environment. The plug-and-play and auto-negotiation capabilities allow the Switch to auto-detect its link partner with automatically sense half or full duplex connections for high speed and the best speed. Each port provides Auto MDI/MDIX func tion and full bandwidth (Maximum with 200Mbps in full duplex mode) without traditi
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NE021 NEC
NEC
  NPN SILICON HIGH FREQUENCY TRANSISTOR

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NE021 NEC
NEC
  NPN Silicon High Frequency Transistor

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NE021 ETC
ETC
  NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E NE021 SERIES • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s r e b m : u E n T t O r e a N r p a E S ng heet A i E w o l PL l as t o f a The this d ive: om omot 0 r f NE02135 r p 10 n 2 TYPICAL NOISE PARAMETERS o 0 n rs NE 2133 e b m u n NE0 2139 rt e a r 0 p a E g N n et i e w h s llo NE02139 a t o f a d TYPICAL NOISE PARAM
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NE021 CEL
CEL
  NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression B E NE021 SERIES DESCRIPTION NEC's NE021 series of NPN silicon transistors provides economical solutions to wide ranges of amplifier and oscillator problems. Low noise and high current capability provide low intermodulation distortion. The NE021 series is available as a chip or in seve
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NE02100 NEC
NEC
  NPN Silicon High Frequency Transistor

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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