Datasheet NJ14AL Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	PDF
1	NJ14AL	Silicon Junction Field-Effect Transistor F-4 01/99 NJ14AL Process Silicon Junction Field-Effect Transistor ¥ Low-Noise, High Gain Amplifier ¥ Rf AMP to 1.0 Ghz Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.	InterFET

NJ1 Datasheet ( Hoja de datos ) - resultados coincidentes

Número de pieza	Descripción	Fabricantes	PDF
NJ132L	Silicon Junction Field-Effect Transistor Low-Noise Amplifier F-34 01/99 NJ132L Process Silicon Junction Field-Effect Transistor ¥ Low-Noise Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C G S-D S-D G Die Size = 0.022" X 0.02	InterFET
NJ1800D	Silicon Junction Field-Effect Transistor F-44 01/99 NJ1800D Process Silicon Junction Field-Effect Transistor ¥ Ultra Low-Noise Pre-Amplifier Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C D G Devices in this Dat	InterFET
NJ16	Silicon Junction Field-Effect Transistor F-6 01/99 NJ16 Process Silicon Junction Field-Effect Transistor ¥ Low Current Switch ¥ General Purpose Amplifier ¥ High Breakdown Voltage Absolute maximum ratings at TA = 25¡C Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65	InterFET

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Número de pieza	Descripción	Fabricantes	PDF
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