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Datasheet NJ26 Equivalent ( PDF ) |
N.º | Número de pieza | Descripción | Fabricantes | Category |
1 | NJ26 | Silicon Junction Field-Effect Transistor F-8
01/99
NJ26 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bond | INTERFET | transistor |
2 | NJ26A | Silicon Junction Field-Effect Transistor F-10
01/99
NJ26A Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Rou | InterFET | transistor |
3 | NJ26L | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier F-12
01/99
NJ26L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bon | InterFET | transistor |
NJ2 Datasheet ( Hoja de datos ) - resultados coincidentes |
N.º | Número de pieza | Descripción | Fabricantes | Catagory |
1 | NJ26 | Silicon Junction Field-Effect Transistor F-8
01/99
NJ26 Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bond INTERFET transistor | | |
2 | NJ26A | Silicon Junction Field-Effect Transistor F-10
01/99
NJ26A Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Rou InterFET transistor | | |
3 | NJ26L | Silicon Junction Field-Effect Transistor Low-Noise High Gain Amplifier F-12
01/99
NJ26L Process
Silicon Junction Field-Effect Transistor
¥ Low-Noise, High Gain Amplifier
Absolute maximum ratings at TA = 25¡C
Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C
G S-D S-D G
Die Size = 0.016" X 0.016" All Bon InterFET transistor | |
Esta página es del resultado de búsqueda del NJ26. Si pulsa el resultado de búsqueda de NJ26 se puede ver detalladamente sobre la hoja de datos, el circuito y la disposición de pin. |
Número de pieza | Descripción | Fabricantes | |
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