DataSheet26.com


NJD2873 даташит

Функция этой детали – «SilICon NPN Power Transistor».



Показать результаты поиска

scroll
Номер в каталоге Производители Описание PDF
NJD2873 ON Semiconductor
ON Semiconductor
  Power Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS C
pdf
NJD2873 Inchange Semiconductor
Inchange Semiconductor
  Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor NJD2873 DESCRIPTION ·Low Collector-Emitter Saturation Voltage- : VCE(sat)= 0.3V(Max)( IC= 1A; IB= 50mA) ·DC Current Gain -hFE = 120(Min)@ IC= 0.5A ·High Current-Gain—Bandwidth Product ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for high-gain audio amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 50 V VCEO Collector-Emitt
pdf
NJD2873T4 ON Semiconductor
ON Semiconductor
  NPN Silicon DPAK For Surface Mount Applications

NJD2873T4 Plastic Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features http://onsemi.com • Pb−Free Package is Available • High DC Current Gain − • • • • hFE = 120 (Min) @ IC = 500 mA = 40 (Min) @ IC = 2 A Low Collector−Emitter Saturation Voltage − VCE(sat) = 0.3 Vdc (Max) @ IC = 1 A High Current−Gain − Bandwidth Product − fT = 65 MHz (Min) @ IC = 100 mA Epoxy Meets UL 94 V−0 @ 0.125 in ESD Ratin
pdf
NJD2873T4G ON Semiconductor
ON Semiconductor
  Power Transistors

NJD2873, NJVNJD2873 Power Transistors NPN Silicon DPAK For Surface Mount Applications Designed for high−gain audio amplifier applications. Features • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Epoxy Meets UL 94 V−0 @ 0.125 in • NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS C
pdf

[1]   



Последние обновления

scroll
Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

pdf
NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

pdf

Index :   

A    B    C    D    E    F    G    H    I    J  

  K    L    M    N    O    P    Q

DataSheet26.com      |     2020      |     Контакты