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NJG1159PHH даташит

Функция этой детали – «Gnss Front-end Module».



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Номер в каталоге Производители Описание PDF
NJG1159PHH New Japan Radio
New Japan Radio
  GNSS Front-End Module

NJG1159PHH GNSS Front-End Module I GENERAL DESCRIPTION The NJG1159PHH is a front-end module (FEM) designed for GNSS including GPS, GLONASS, BeiDou, and Galileo applications. This FEM offers low noise figure, high linearity, and high out-band rejection characteristics brought by included high performance pre-SAW filter and low noise amplifier (LNA). This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has stand-by mode to save current consumption. This FEM offers very small mounting area by
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Это результат поиска, начинающийся с "1159PHH", "NJG1159"

Номер в каталоге Производители Описание PDF
2SB1159 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB1159 DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications PINNING PIN 1 2
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2SD1159 Sanyo Semicon Device
Sanyo Semicon Device

NPN Triple Diffused Planar Silicon Transistor

Ordering number:EN837E NPN Triple Diffused Planar Silicon Transistor 2SD1159 TV Horizontal Deflection Output, High-Current Switching Applications Features · Capable of efficient drive with small internal loss due to excellent tf. Package Dimensions unit:mm 2010C [2SD1159]
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2SD1159 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1159 DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications PINNING PIN 1 2 3 Base Collector;connected to mounti
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2SK1159 Hitachi Semiconductor
Hitachi Semiconductor

Silicon N-Channel MOS FET

2SK1159, 2SK1160 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver Outline TO-220AB
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2SK1159 Renesas
Renesas

Silicon N Channel MOS FET

2SK1159, 2SK1160 Silicon N Channel MOS FET REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching r
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74AC11590 Texas Instruments
Texas Instruments

8-Bit Binary Counter With Registered 3-State Outputs

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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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