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NJG1159PHH даташитФункция этой детали – «Gnss Front-end Module». |
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Номер в каталоге | Производители | Описание | |
NJG1159PHH | New Japan Radio |
GNSS Front-End Module NJG1159PHH
GNSS Front-End Module
I GENERAL DESCRIPTION The NJG1159PHH is a front-end module (FEM) designed for GNSS including
GPS, GLONASS, BeiDou, and Galileo applications. This FEM offers low noise figure, high linearity, and high out-band rejection characteristics brought by included high performance pre-SAW filter and low noise amplifier (LNA). This FEM can operate from 1.5V to 3.3V single voltage in -40 to 105°C. This FEM has stand-by mode to save current consumption.
This FEM offers very small mounting area by |
Это результат поиска, начинающийся с "1159PHH", "NJG1159" |
Номер в каталоге | Производители | Описание | |
2SB1159 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1159
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 |
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2SD1159 | Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor Ordering number:EN837E
NPN Triple Diffused Planar Silicon Transistor
2SD1159
TV Horizontal Deflection Output, High-Current Switching Applications
Features
· Capable of efficient drive with small internal loss due to excellent tf.
Package Dimensions
unit:mm
2010C
[2SD1159]
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2SD1159 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1159
DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounti |
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2SK1159 | Hitachi Semiconductor |
Silicon N-Channel MOS FET 2SK1159, 2SK1160
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
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2SK1159 | Renesas |
Silicon N Channel MOS FET 2SK1159, 2SK1160
Silicon N Channel MOS FET
REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching r |
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74AC11590 | Texas Instruments |
8-Bit Binary Counter With Registered 3-State Outputs |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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