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NJM8065 даташитФункция этой детали – «Dual Operational Amplifier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NJM8065 | New Japan Radio |
DUAL OPERATIONAL AMPLIFIER NJM8065
DUAL OPERATIONAL AMPLIFIER
■ GENERAL DESCRIPTION The NJM8065 integrated circuit is a high-gain, wide
bandwidth, dual operational amplifier. The NJM8065 combines many of the features of the
NJM4558 as well as providing the capability of wider bandwidth (10MHz typ.), and higher slew rate (4V/μs typ.) make the
NJM8065 ideal for active filters, data and telecommunications,
and many instrumentation applications.
■ PACKAGE OUTLINE
NJM8065G (SOP8)
NJM8065M (DMP8)
NJM8065RB1 (MSOP8 (TVSP8))
NJM8065V (SSOP8)
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Это результат поиска, начинающийся с "8065", "NJM8" |
Номер в каталоге | Производители | Описание | |
2518065007Y6 | ETC |
Chip Beads High Current
Part Number
9
9 9 9 9 9 9 9
Pkg. Size
0805 (2012) 0805 (2012) 1206 (3216) 1206 (3216) 1806 (4516) 1806 (4516) 1812 (4532)
50 MHz
47 94 39 96 36 75 92
Impedance (Ω) 100 500 MHz+ MHz
60 ±25% 120 ±25% 50 ±25% 120 ±25% 50 ±25% 100 ±25% 120 ±25% 88 158 68 137 |
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2518065007Y6 | Fair Rite |
Chip Beads 42
14th Edition
SM Beads
Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.)
Tape Width mm Pitch mm
Part Number*
Fig.
A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5 |
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AD8065 | Analog Devices |
Op Amps Data Sheet
FEATURES
Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G = +1) 180 V/µs slew rate (G = +2) Low noise
7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide supply voltage range: 5 V t |
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APT8065 | Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8065AVR
800V 11.5A 0.650Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
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APT8065 | Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8065AVR
800V 11.5A 0.650Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
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APT8065 | Advanced Power Technology |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. APT8065AVR
800V 11.5A 0.650Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |