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NJM8065 даташит

Функция этой детали – «Dual Operational Amplifier».



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Номер в каталоге Производители Описание PDF
NJM8065 New Japan Radio
New Japan Radio
  DUAL OPERATIONAL AMPLIFIER

NJM8065 DUAL OPERATIONAL AMPLIFIER ■ GENERAL DESCRIPTION The NJM8065 integrated circuit is a high-gain, wide bandwidth, dual operational amplifier. The NJM8065 combines many of the features of the NJM4558 as well as providing the capability of wider bandwidth (10MHz typ.), and higher slew rate (4V/μs typ.) make the NJM8065 ideal for active filters, data and telecommunications, and many instrumentation applications. ■ PACKAGE OUTLINE NJM8065G (SOP8) NJM8065M (DMP8) NJM8065RB1 (MSOP8 (TVSP8)) NJM8065V (SSOP8)
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Это результат поиска, начинающийся с "8065", "NJM8"

Номер в каталоге Производители Описание PDF
2518065007Y6 ETC
ETC

Chip Beads

High Current Part Number 9 9 9 9 9 9 9 9 Pkg. Size 0805 (2012) 0805 (2012) 1206 (3216) 1206 (3216) 1806 (4516) 1806 (4516) 1812 (4532) 50 MHz 47 94 39 96 36 75 92 Impedance (Ω) 100 500 MHz+ MHz 60 ±25% 120 ±25% 50 ±25% 120 ±25% 50 ±25% 100 ±25% 120 ±25% 88 158 68 137
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2518065007Y6 Fair Rite
Fair Rite

Chip Beads

42 14th Edition SM Beads Dimensions (Bold numbers are in millimeters, light numbers are nominal in inches.) Tape Width mm Pitch mm Part Number* Fig. A 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.85±0.2 .112 2.70±0.2 .106 2.70±0.2 .106 1.5
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AD8065 Analog Devices
Analog Devices

Op Amps

Data Sheet FEATURES Qualified for automotive applications FET input amplifier 1 pA input bias current Low cost High speed: 145 MHz, −3 dB bandwidth (G = +1) 180 V/µs slew rate (G = +2) Low noise 7 nV/√Hz (f = 10 kHz) 0.6 fA/√Hz (f = 10 kHz) Wide supply voltage range: 5 V t
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APT8065 Advanced Power Technology
Advanced Power Technology

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw
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APT8065 Advanced Power Technology
Advanced Power Technology

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw
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APT8065 Advanced Power Technology
Advanced Power Technology

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

APT8065AVR 800V 11.5A 0.650Ω POWER MOS V ® Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster sw
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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