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NJW1159 даташитФункция этой детали – «ElectronIC Volume». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NJW1159 | JRC |
Electronic Volume NJW1159
2-CHANNEL ELECTRONIC VOLUME
s GENERAL DESCRIPTION NJW1159 is a two channel electronic volume IC. It is included output buffer amplifier and also resistor output terminal for using external amplifier to customize for your application. These functions are controlled by three-wired serial data. And the chip selector is available for using four chips on same serial bus line. It’s available for two-channel stereo and or multi-channel audio volume. s PACKAGE OUTLINE
NJW1159V
NJW1159M
NJW1159D |
Это результат поиска, начинающийся с "1159", "NJW1" |
Номер в каталоге | Производители | Описание | |
2SB1159 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
2SB1159
DESCRIPTION ·With TO-3PFa package ·Complement to type 2SD1714 ·High fT ·Wide area of safe operation APPLICATIONS ·For high power amplifier applications
PINNING PIN 1 2 |
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2SD1159 | Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor Ordering number:EN837E
NPN Triple Diffused Planar Silicon Transistor
2SD1159
TV Horizontal Deflection Output, High-Current Switching Applications
Features
· Capable of efficient drive with small internal loss due to excellent tf.
Package Dimensions
unit:mm
2010C
[2SD1159]
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2SD1159 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1159
DESCRIPTION ·With TO-220 package APPLICATIONS ·TV horizontal deflection output, ·High-current switching applications
PINNING PIN 1 2 3 Base Collector;connected to mounti |
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2SK1159 | Hitachi Semiconductor |
Silicon N-Channel MOS FET 2SK1159, 2SK1160
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
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2SK1159 | Renesas |
Silicon N Channel MOS FET 2SK1159, 2SK1160
Silicon N Channel MOS FET
REJ03G0911-0200 (Previous: ADE-208-1249) Rev.2.00 Sep 07, 2005
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching r |
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74AC11590 | Texas Instruments |
8-Bit Binary Counter With Registered 3-State Outputs |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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