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Datasheet NP16 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | NP16 | 16 AMPERE SILICON RECTIFIER |  ETC | rectifier |
| 2 | NP160N04TDG | SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TDG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP160N04TDG-E1-AY NP160N04TDG-E2-AY
N |  NEC | data |
| 3 | NP160N04TUG | SWITCHING N-CHANNEL POWER MOS FET
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TUG
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TUG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP160N04TUG-E1-AY NP160N04TUG-E2-AY
N | NEC | data |
| 4 | NP160N04TUJ | MOS FIELD EFFECT TRANSISTOR NP160N04TUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0021EJ0100 Rev.1.00
Jul 01, 2010
Description
The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, I |  Renesas | transistor |
| 5 | NP160N04TUK | MOS FIELD EFFECT TRANSISTOR NP160N04TUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0543EJ0100 Rev.1.00
Sep 23, 2011
Description
The NP160N04TUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance RDS(on) = 1.5 mΩ MAX. ( VGS = 10 V | Renesas | transistor |
NP1 Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | NP100N04NUJ | MOS FIELD EFFECT TRANSISTOR NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Description
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance ⎯ RDS(on) = 3.0 mΩ MAX. (VGS = 1 Renesas transistor | | |
| 2 | NP100N04PUK | MOS FIELD EFFECT TRANSISTOR NP100N04PUK
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0545EJ0100 Rev.1.00
Sep 23, 2011
Description
The NP100N04PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
• Super low on-state resistance RDS(on) = 2.3 mΩ MAX. ( VGS = 10 V Renesas transistor | | |
| 3 | NP100N055PUK | MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet
NP100N055PUK
MOS FIELD EFFECT TRANSISTOR
R07DS0589EJ0100 Rev.1.00
Dec 12, 2011
Description
The NP100N055PUK is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance RDS(on) = 3.25 m MAX. (VGS = Renesas transistor | | |
| 4 | NP100P04PDG | MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P04PDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P04PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. NEC transistor | | |
| 5 | NP100P04PLG | MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P04PLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P04PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. NEC transistor | | |
| 6 | NP100P06PDG | MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PDG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PDG is P-channel MOS Field Effect Transistor designed for high current switching applications. NEC transistor | | |
| 7 | NP100P06PLG | MOS FIELD EFFECT TRANSISTOR
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP100P06PLG
SWITCHING P-CHANNEL POWER MOSFET
DESCRIPTION
The NP100P06PLG is P-channel MOS Field Effect Transistor designed for high current switching applications. NEC transistor | |
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