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NP32N055HDE даташитФункция этой детали – «Mos Field Effect Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NP32N055HDE | NEC |
MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated • Super low on-state resistance
RDS(on)1 = 24 mΩ MAX. (VGS = 10 V, ID = 16 A) RDS(on)2 = 29 mΩ MAX. (VGS = 5.0 V, ID = 16 A) • Low Ciss : Ciss = 1300 pF TYP.
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP32N055HDE NP32N055IDE Note
TO- |
Это результат поиска, начинающийся с "32N055HDE", "NP32N055" |
Номер в каталоге | Производители | Описание | |
AN32055A | Panasonic |
7 x 7 Dots Matrix LED Driver LSI DReovcisNioon. . T2A4-EA-04511
Product Standards
AN32055A
http://www.semicon.panasonic.co.jp/en/
7 x 7 Dots Matrix LED Driver LSI with Step-up DC/DC Converter for White LED
FEATURES
7 x 7 LED Matrix Driver
(Total LED that can be driven = 49)
Built-in memory (ROM and |
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NP32N055HHE | Renesas |
N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated |
|
NP32N055HLE | NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PA |
|
NP32N055IDE | NEC |
MOS FIELD EFFECT TRANSISTOR DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HDE, NP32N055IDE, NP32N055SDE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated |
|
NP32N055IHE | Renesas |
N-CHANNEL POWER MOSFET DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HHE, NP32N055IHE, NP32N055SHE
SWITCHING N-CHANNEL POWER MOSFET
DESCRIPTION
These products are N-Channel MOS Field Effect Transistors designed for high current switching applications.
FEATURES
• Channel temperature 175 degree rated |
|
NP32N055ILE | NEC |
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP32N055HLE, NP32N055ILE
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
These products are N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PA |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |