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NPC181M2D5ZATRF даташит

Функция этой детали – «Surface Mount Solid Polymer Aluminum ElectrolytIC Capacitors».



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Номер в каталоге Производители Описание PDF
NPC181M2D5ZATRF NIC
NIC
  Surface Mount Solid Polymer Aluminum Electrolytic Capacitors

Surface Mount Solid Polymer Aluminum Electrolytic Capacitors FEATURES • LOW IMPEDANCE & ESR AT HIGH FREQUENCY RoHS • HIGH RIPPLE CURRENT Compliant • REPLACES MULTIPLE TANTALUM CHIPS IN POWER SUPPLIES includes all homogeneous materials • FITS EIA (7343) “D” LAND PATTERNS • Pb-FREE (GOLD TERMINATION PLATING) *See Part P Number N b System S f for Details D il • COMPATIBLE WITH +260°C* REFLOW SOLDERING NPC Series CHARACTERISTICS Rated Working Range Rated Capacitance Range Operating Temperature Range Capac
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Это результат поиска, начинающийся с "181M2D5ZATRF", "NPC181M2D5ZA"

Номер в каталоге Производители Описание PDF
18125A103JAT7A AVX Corporation
AVX Corporation

C0G Dielectric

C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w PART NUMBER (see page 2 for complete part number explanation) 0805 Size (L" x W") Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2 Insulation Resistance (Ohm-Farads) Temperature C
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18125xxxx AVX Corporation
AVX Corporation

C0G Dielectric

C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w PART NUMBER (see page 2 for complete part number explanation) 0805 Size (L" x W") Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2 Insulation Resistance (Ohm-Farads) Temperature C
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AGR18125E TriQuint Semiconductor
TriQuint Semiconductor

Transistor

Product Brief AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor Introduction The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobil
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IDT72T18125 IDT
IDT

(IDT72T18xxx) HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS

2.5 VOLT HIGH-SPEED TeraSync™ FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 1
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MRF7S18125AHR3 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000
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MRF7S18125AHSR3 Freescale Semiconductor
Freescale Semiconductor

RF Power Field Effect Transistors

Freescale Semiconductor Technical Data Document Number: MRF7S18125AH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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