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NPC181M2D5ZATRF даташитФункция этой детали – «Surface Mount Solid Polymer Aluminum ElectrolytIC Capacitors». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NPC181M2D5ZATRF | NIC |
Surface Mount Solid Polymer Aluminum Electrolytic Capacitors Surface Mount Solid Polymer Aluminum Electrolytic Capacitors
FEATURES
• LOW IMPEDANCE & ESR AT HIGH FREQUENCY RoHS • HIGH RIPPLE CURRENT Compliant • REPLACES MULTIPLE TANTALUM CHIPS IN POWER SUPPLIES includes all homogeneous materials • FITS EIA (7343) “D” LAND PATTERNS • Pb-FREE (GOLD TERMINATION PLATING) *See Part P Number N b System S f for Details D il • COMPATIBLE WITH +260°C* REFLOW SOLDERING
NPC Series
CHARACTERISTICS
Rated Working Range Rated Capacitance Range Operating Temperature Range Capac |
Это результат поиска, начинающийся с "181M2D5ZATRF", "NPC181M2D5ZA" |
Номер в каталоге | Производители | Описание | |
18125A103JAT7A | AVX Corporation |
C0G Dielectric C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w
PART NUMBER (see page 2 for complete part number explanation)
0805
Size (L" x W")
Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2
Insulation Resistance (Ohm-Farads)
Temperature C |
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18125xxxx | AVX Corporation |
C0G Dielectric C0G (NP0) Dielectric m o General Specifications .c U 4 t e e h S a at .D w w w
PART NUMBER (see page 2 for complete part number explanation)
0805
Size (L" x W")
Voltage 6.3V = 6 10V = Z 16V = Y 25V = 3 50V = 5 100V = 1 200V = 2
Insulation Resistance (Ohm-Farads)
Temperature C |
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AGR18125E | TriQuint Semiconductor |
Transistor Product Brief
AGR18125E 125 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18125E is a 125 W, 26 V, N-channel goldmetallized, laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for global system for mobil |
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IDT72T18125 | IDT |
(IDT72T18xxx) HIGH-SPEED TeraSync FIFO 18-BIT/9-BIT CONFIGURATIONS
2.5 VOLT HIGH-SPEED TeraSync™ FIFO IDT72T1845, IDT72T1855 18-BIT/9-BIT CONFIGURATIONS IDT72T1865, IDT72T1875 2,048 x 18/4,096 x 9, 4,096 x 18/8,192 x 9, 8,192 x 18/16,384 x 9, IDT72T1885, IDT72T1895 16,384 x 18/32,768 x 9, 32,768 x 18/65,536 x 9, 65,536 x 1 |
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MRF7S18125AHR3 | Freescale Semiconductor |
RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF7S18125AH Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 |
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MRF7S18125AHSR3 | Freescale Semiconductor |
RF Power Field Effect Transistors Freescale Semiconductor Technical Data
Document Number: MRF7S18125AH Rev. 0, 11/2008
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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