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NRVBM2H100T3G даташит

Функция этой детали – «Surface Mount Schottky Power Rectifier».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NRVBM2H100T3G ON Semiconductor
ON Semiconductor
  Surface Mount Schottky Power Rectifier

MBRM2H100T3G, NRVBM2H100T3G Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite® has the same thermal performance as the SMA while being 50% small
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Это результат поиска, начинающийся с "2H100T3G", "NRVBM2H100"

Номер в каталоге Производители Описание PDF
MBRA2H100T3G ON Semiconductor
ON Semiconductor

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Id
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MBRAF2H100T3G ON Semiconductor
ON Semiconductor

Surface Mount Schottky Power Rectifier

MBRAF2H100T3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit
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MBRAF2H100T3G ON Semiconductor
ON Semiconductor

Surface Mount Schottky Power Rectifier

MBRAF2H100 Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited
pdf
MBRM2H100T3G ON Semiconductor
ON Semiconductor

Surface Mount Schottky Power Rectifier

MBRM2H100T3G, NRVBM2H100T3G Surface Mount Schottky Power Rectifier POWERMITE® Power Surface Mount Package The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current
pdf
MBRS2H100T3G ON Semiconductor
ON Semiconductor

2A 100V SCHOTTKY SMB PACKAGE

MBRS2H100T3G Surface Mount Schottky Power Rectifier SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ide
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MBRS2H100T3G ON Semiconductor
ON Semiconductor

Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package

MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Id
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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