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NRVBM2H100T3G даташитФункция этой детали – «Surface Mount Schottky Power Rectifier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NRVBM2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier MBRM2H100T3G, NRVBM2H100T3G
Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package
The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current tradeoff. The advanced packaging techniques provide for a highly efficient micro miniature, space saving surface mount Rectifier. With its unique heatsink design, the Powermite® has the same thermal performance as the SMA while being 50% small |
Это результат поиска, начинающийся с "2H100T3G", "NRVBM2H100" |
Номер в каталоге | Производители | Описание | |
MBRA2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier
SMA/SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Id |
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MBRAF2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier MBRAF2H100T3G
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit |
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MBRAF2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier MBRAF2H100
Surface Mount Schottky Power Rectifier
This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited |
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MBRM2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier MBRM2H100T3G, NRVBM2H100T3G
Surface Mount Schottky Power Rectifier
POWERMITE® Power Surface Mount Package
The Schottky Powermite® employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop−reverse current |
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MBRS2H100T3G | ON Semiconductor |
2A 100V SCHOTTKY SMB PACKAGE
MBRS2H100T3G Surface Mount Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a metal-to-silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Ide |
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MBRS2H100T3G | ON Semiconductor |
Surface Mount Schottky Power Rectifier SMA/SMB Power Surface Mount Package MBRS2H100T3G, MBRA2H100T3G Surface Mount Schottky Power Rectifier
SMA/SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a metal−to−silicon power rectifier. Features epitaxial construction with oxide passivation and metal overlay contact. Id |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |