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NSB8KT даташитФункция этой детали – «Glass Passivated General Purpose PlastIC Rectifier». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NSB8KT | General |
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
NSB8AT THRU NSB8MT
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage - 50 to 1000 Volts
TO-263AA
Forward Current - 8.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High forward current capability ♦ High surge current capability ♦ Low forward voltage drop ♦ Glass passivated chip junction ♦ High temperature soldering in accordance with CECC 802 / Reflow guaranteed
0.380 (9.65) 0.420 (10.67) 0.245 (6. |
Это результат поиска, начинающийся с "8KT", "NSB" |
Номер в каталоге | Производители | Описание | |
HCS138KTR | Intersil Corporation |
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer HCS138T
Data Sheet July 1999 File Number
4614.1
Radiation Hardened Inverting 3-to-8 Line Decoder/Demultiplexer
Intersil‘s Satellite Applications FlowTM (SAF) devices are fully tested and guaranteed to 100kRAD total dose. These QML Class T devices are processed to a standard � |
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M58LR128KT | Numonyx |
(M58LRxxxKx) 128 or 256 Mbit 1.8 V supply Flash memories M58LR128KT M58LR128KB M58LR256KT M58LR256KB
128 or 256 Mbit (×16, multiple bank, multilevel interface, burst) 1.8 V supply Flash memories
Preliminary Data
Features
■
Supply voltage – VDD = 1.7 V to 2.0 V for program, erase and read – VDDQ = 1.7 V to 2.0 V for I/O buffers |
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MT8KTF12864HZ | Micron |
1GB 1.35V DDR3L SDRAM SODIMM 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM Features
1.35V DDR3L SDRAM SODIMM
MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB
Features
• DDR3L functionality and operations supported as defined in the component data sheet
• 204-pin, small-outline dual in-li |
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MT8KTF25664HZ | Micron |
2GB 1.35V DDR3L SDRAM SODIMM 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM Features
1.35V DDR3L SDRAM SODIMM
MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB
Features
• DDR3L functionality and operations supported as defined in the component data sheet
• 204-pin, small-outline dual in-li |
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MT8KTF51264HZ | Micron |
4GB 1.35V DDR3L SDRAM SODIMM 1GB, 2GB, 4GB (x64, SR) 204-Pin DDR3L SODIMM Features
1.35V DDR3L SDRAM SODIMM
MT8KTF12864HZ – 1GB MT8KTF25664HZ – 2GB MT8KTF51264HZ – 4GB
Features
• DDR3L functionality and operations supported as defined in the component data sheet
• 204-pin, small-outline dual in-li |
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NS8KT | General |
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER NS8AT THRU NS8MT
GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER
Reverse Voltage - 50 to 1000 Volts
TO-220AC
0.185 (4.70) 0.415 (10.54) MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.175 (4.44)
Forward Current - 8.0 Amperes
FEATURES
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |