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NTE1898 даташитФункция этой детали – «Integrated Circuit Dual Audio Power Amp / 5.8w». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE1898 | NTE |
Integrated Circuit Dual Audio Power Amp / 5.8W (22W BTL) NTE1898 & NTE1899 Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL)
Description: The NTE1898 and NTE1899 are dual audio power amplifiers in a 12–Lead SIP type package designed for use as high performance, car–audio power amplifiers in consumer applications. These devices feature high power, low distortion, and low noise along with various types of protection circuits. The NTE1899 is a mirror image pin–out of the NTE1898 allowing for easier design of PC boards when used in BTL–stereo applications. Features: |
Это результат поиска, начинающийся с "1898", "NTE1" |
Номер в каталоге | Производители | Описание | |
1898 | STMicroelectronics |
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS SD1898
RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS
. . . . . .
1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN
.400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898
PIN CONNECTION
DESCRIPTION The SD18 |
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2SA1898 | Sanyo Semicon Device |
PNP Epitaxial Planar Silicon Transistor Ordering number:5049
Applications
· High-speed switching.
Features
· Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed.
PNP Epitaxial Planar Silicon Transistor
2SA1898
DC/DC Converter Applica |
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2SD1898 | ROHM Semiconductor |
Power Transistor (80V / 1A) 2SD1898 / 2SD1733
NPN 1.0A 80V Middle Power Transistor
Parameter
VCEO IC
Value
80V 1.0A
lOutline
MPT3
Base Collector
Emitter
lFeatures
1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat)
VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)
4) |
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2SD1898 | Weitron Technology |
Epitaxial Planar NPN Transistors 2SD1898
Epitaxial Planar NPN Transistors
SOT-89
1
1. BASE 2. COLLECTOR 3. EMITTER
2
3
ABSOLUTE MAXIMUM RATINGS (Ta=25 C)
Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Tem |
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2SD1898 | Unisonic Technologies |
POWER TRANSISTOR UTC 2SD1898
NPN EPITAXIAL SILICON TRANSISTOR
POWER TRANSISTOR
FEATURES
*High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260.
1
SOT-89
1:EMITTER
2:COLLECTOR
3:BASE
ABSOLUTE MAXIMUM RATINGS ( Ta=25°C )
PARAMETER SYMBOL RATING
100 80 |
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2SD1898 | SeCoS |
NPN Epitaxial Planar Silicon Transistor Elektronische Bauelemente
2SD1898
NPN Silicon Epitaxial Planar Transistor
RoHS Compliant Product
Description
The 2SD1898 is designed for switching applications.
SOT-89
REF.
A B C D E F
Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60
0.89 1.20
REF.
G H I |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |