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NTE1898 даташит

Функция этой детали – «Integrated Circuit Dual Audio Power Amp / 5.8w».



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Номер в каталоге Производители Описание PDF
NTE1898 NTE
NTE
  Integrated Circuit Dual Audio Power Amp / 5.8W (22W BTL)

NTE1898 & NTE1899 Integrated Circuit Dual Audio Power Amp, 5.8W (22W BTL) Description: The NTE1898 and NTE1899 are dual audio power amplifiers in a 12–Lead SIP type package designed for use as high performance, car–audio power amplifiers in consumer applications. These devices feature high power, low distortion, and low noise along with various types of protection circuits. The NTE1899 is a mirror image pin–out of the NTE1898 allowing for easier design of PC boards when used in BTL–stereo applications. Features:
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Это результат поиска, начинающийся с "1898", "NTE1"

Номер в каталоге Производители Описание PDF
1898 STMicroelectronics
STMicroelectronics

RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS

SD1898 RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS . . . . . . 1.65 GHz 28 VOLTS EFFICIENCY 40% MIN. CLASS C OPERATION COMMON BASE P OUT = 32 W MIN. WITH 9 dB GAIN .400 SQ. 2LFL (M186) epoxy sealed ORDER CODE SD1898 BRANDING 1898 PIN CONNECTION DESCRIPTION The SD18
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2SA1898 Sanyo Semicon Device
Sanyo Semicon Device

PNP Epitaxial Planar Silicon Transistor

Ordering number:5049 Applications · High-speed switching. Features · Adoption of FBET and MBIT processes. · Large current capacity. · Low collector-to-emitter saturation voltage. · Fast switching speed. PNP Epitaxial Planar Silicon Transistor 2SA1898 DC/DC Converter Applica
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2SD1898 ROHM Semiconductor
ROHM Semiconductor

Power Transistor (80V / 1A)

2SD1898 / 2SD1733 NPN 1.0A 80V Middle Power Transistor Parameter VCEO IC Value 80V 1.0A lOutline MPT3 Base Collector Emitter lFeatures 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE(sat) VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA) 4)
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2SD1898 Weitron Technology
Weitron Technology

Epitaxial Planar NPN Transistors

2SD1898 Epitaxial Planar NPN Transistors SOT-89 1 1. BASE 2. COLLECTOR 3. EMITTER 2 3 ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature, Storage Tem
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2SD1898 Unisonic Technologies
Unisonic Technologies

POWER TRANSISTOR

UTC 2SD1898 NPN EPITAXIAL SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(sat) *Complements the 2SB1260. 1 SOT-89 1:EMITTER 2:COLLECTOR 3:BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25°C ) PARAMETER SYMBOL RATING 100 80
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2SD1898 SeCoS
SeCoS

NPN Epitaxial Planar Silicon Transistor

Elektronische Bauelemente 2SD1898 NPN Silicon Epitaxial Planar Transistor RoHS Compliant Product Description The 2SD1898 is designed for switching applications. SOT-89 REF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50 2.40 2.60 0.89 1.20 REF. G H I
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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