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NTE1918 даташитФункция этой детали – «3 Terminal Positive Voltage Regulator 15v / 3a». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE1918 | NTE |
3 Terminal Positive Voltage Regulator 15V / 3A NTE1918 3 Terminal Positive Voltage Regulator 15V, 3A
Description: The NTE1918 is a positive 3–terminal voltage regulator in a TO3 type package capable of driving loads in excess of 3A. This device employs internal current limiting, thermal shutdown, and safe–area compensation. Although designed primarily as a fixed voltage regulator, the NTE1918 can be used with external components to obtain adjustable voltages and currents. Features: D Output Current in Excess of 3A D Power Dissipation: 30W D Internal Thermal Over |
Это результат поиска, начинающийся с "1918", "NTE1" |
Номер в каталоге | Производители | Описание | |
2N1918 | New Jersey Semi-Conductor |
(2N1917 - 2N1922) SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS Free Datasheet http:///
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2SD1918 | Inchange Semiconductor |
Silicon NPN Power Transistor isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD1918
DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operatio |
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2SD1918 | ROHM Semiconductor |
Power Transistor (160V / 1.5A) 2SD2211 / 2SD1918 / 2SD1857A
Transistors
Power Transistor (160V , 1.5A)
2SD2211 / 2SD1918 / 2SD1857A
!Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1 |
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2SD1918 | Kexin |
Silicon NPN Epitaxial SMD Type
Silicon NPN Epitaxial 2SD1918
TO-252
Transistors
Unit: mm 2.30
+0.8 0.50-0.7 +0.1 -0.1
Features
High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V
+0.2 9.70 -0.2
+0.15 1.50 -0.15
6.50 +0.2 5.30-0.2
+0.15 -0.15
High transi |
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2SK1918 | Hitachi |
Silicon N-Channel MOS FET 2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter |
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2SK1918L | Hitachi |
Silicon N-Channel MOS FET 2SK1918(L), 2SK1918(S)
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |