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NTE1918 даташит

Функция этой детали – «3 Terminal Positive Voltage Regulator 15v / 3a».



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Номер в каталоге Производители Описание PDF
NTE1918 NTE
NTE
  3 Terminal Positive Voltage Regulator 15V / 3A

NTE1918 3 Terminal Positive Voltage Regulator 15V, 3A Description: The NTE1918 is a positive 3–terminal voltage regulator in a TO3 type package capable of driving loads in excess of 3A. This device employs internal current limiting, thermal shutdown, and safe–area compensation. Although designed primarily as a fixed voltage regulator, the NTE1918 can be used with external components to obtain adjustable voltages and currents. Features: D Output Current in Excess of 3A D Power Dissipation: 30W D Internal Thermal Over
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Это результат поиска, начинающийся с "1918", "NTE1"

Номер в каталоге Производители Описание PDF
2N1918 New Jersey Semi-Conductor
New Jersey Semi-Conductor

(2N1917 - 2N1922) SWITCHING SILICON EPITAXIAL JUNCTION PNP TRANSISTORS

Free Datasheet http:///
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2SD1918 Inchange Semiconductor
Inchange Semiconductor

Silicon NPN Power Transistor

isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SD1918 DESCRIPTION ·Suitable for middle power drivers ·High voltage:VCEO=160V ·Complementary PNP types:2SB1275 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operatio
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2SD1918 ROHM Semiconductor
ROHM Semiconductor

Power Transistor (160V / 1.5A)

2SD2211 / 2SD1918 / 2SD1857A Transistors Power Transistor (160V , 1.5A) 2SD2211 / 2SD1918 / 2SD1857A !Features 1) High breakdown voltage.(BVCEO = 160V) 2) Low collector output capacitance. (Typ. 20pF at VCB = 10V) 3) High transition frequency.(fT = 80MHZ) 4) Complements the 2SB1
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2SD1918 Kexin
Kexin

Silicon NPN Epitaxial

SMD Type Silicon NPN Epitaxial 2SD1918 TO-252 Transistors Unit: mm 2.30 +0.8 0.50-0.7 +0.1 -0.1 Features High breakdown voltage.(BVCEO = 160V) Low collector output capacitance.Typ. 20pF at VCB = 10V +0.2 9.70 -0.2 +0.15 1.50 -0.15 6.50 +0.2 5.30-0.2 +0.15 -0.15 High transi
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2SK1918 Hitachi
Hitachi

Silicon N-Channel MOS FET

2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter
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2SK1918L Hitachi
Hitachi

Silicon N-Channel MOS FET

2SK1918(L), 2SK1918(S) Silicon N-Channel MOS FET Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC - DC converter
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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