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Datasheet NTE22 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 7 | NTE22 | Silicon NPN Transistor AF PO / General Purpose Amp / Driver NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver
Features: D High Breakdown Voltage: VCEO = 80V D Large IC Capacity: IC = 1A DC D Good hFE Linearity D Low Collector Saturation Voltage Applications: D Medium Power Output Stages D High–Voltage Drivers Absolute Maximum Ratings: Collect |
 NTE |
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| 6 | NTE221 | MOSFET Dual Gate / N-Channel for VHF TV Receivers Applications NTE221 MOSFET Dual Gate, N–Channel for VHF TV Receivers Applications
Description: The NTE221 is an N–channel depletion type, dual–insulated gate, field–effect transistor that utilizes MOS construction. This device has characteristics which makes it highly desirable for use in RF–amplifier |
NTE |
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| 5 | NTE222 | Field Effect Transistor Dual Gate N-Channel MOSFET NTE222 Field Effect Transistor Dual Gate N–Channel MOSFET
Absolute Maximum Ratings: Drain–Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Drain–Gate Voltage, VDG . . . . . . . . . . . . . . . . . . . . |
NTE |
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| 4 | NTE226 | Germanium PNP Transistor Audio Power Amp NTE226 Germanium PNP Transistor Audio Power Amp
Description: The NTE226 is a Germanium PNP transistor in a TO66 type package designed for high–fidelity, high– power output applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . |
NTE |
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