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NTE2340 даташитФункция этой детали – «SilICon NPN Transistor Darlington Power Amp / Switch». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE2340 | NTE |
Silicon NPN Transistor Darlington Power Amp / Switch NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch
Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . |
Это результат поиска, начинающийся с "2340", "NTE2" |
Номер в каталоге | Производители | Описание | |
23C32340GZ | NEC |
UPD23C32340GZ DATA SHEET
MOS INTEGRATED CIRCUIT
µPD23C32340, 23C32380
32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE
Description
The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is |
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2SD2340 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD2340
DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose
PINNING PIN 1 2 3 Base Collector;connected to moun |
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2SK2340 | Panasonic Semiconductor |
Silicon N-Channel Power F-MOS FET Power F-MOS FETs
2SK2340
Silicon N-Channel Power F-MOS FET
s Features
q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown
unit: mm
4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2
s Applications
q Contactless relay q Diving circuit fo |
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2STF2340 | STMicroelectronics |
Low voltage fast-switching PNP power transistors 2STF2340 2STN2340
Low voltage fast-switching PNP power transistors
Features
■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed
Applications
■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC conve |
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2STN2340 | STMicroelectronics |
Low voltage fast-switching PNP power transistors 2STF2340 2STN2340
Low voltage fast-switching PNP power transistors
Features
■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed
Applications
■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC conve |
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AM2340NE | Analog Power |
N-Channel 40-V (D-S) MOSFET Analog Power N-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and b |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |