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NTE2340 даташит

Функция этой детали – «SilICon NPN Transistor Darlington Power Amp / Switch».



Показать результаты поиска

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Номер в каталоге Производители Описание PDF
NTE2340 NTE
NTE
  Silicon NPN Transistor Darlington Power Amp / Switch

NTE2340 Silicon NPN Transistor Darlington Power Amp, Switch Features: D 60V Zener Diode Built–In Between Collector and Base D Very Small Fluctuation in Breakdown Voltages D Large Energy Handling Capability D High Speed Switching Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60 ±10V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . .
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Это результат поиска, начинающийся с "2340", "NTE2"

Номер в каталоге Производители Описание PDF
23C32340GZ NEC
NEC

UPD23C32340GZ

DATA SHEET MOS INTEGRATED CIRCUIT µPD23C32340, 23C32380 32M-BIT MASK-PROGRAMMABLE ROM 4M-WORD BY 8-BIT (BYTE MODE) / 2M-WORD BY 16-BIT (WORD MODE) PAGE ACCESS MODE Description The µPD23C32340 and µPD23C32380 are 33,554,432 bits mask-programmable ROM. The word organization is
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2SD2340 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD2340 DESCRIPTION ·With TO-3PN package ·DARLINGTON ·High DC current gain APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to moun
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2SK2340 Panasonic Semiconductor
Panasonic Semiconductor

Silicon N-Channel Power F-MOS FET

Power F-MOS FETs 2SK2340 Silicon N-Channel Power F-MOS FET s Features q Avalanche energy capacity guaranteed q High-speed switching q Low ON-resistance q No secondary breakdown unit: mm 4.6±0.2 φ3.2±0.1 9.9±0.3 2.9±0.2 s Applications q Contactless relay q Diving circuit fo
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2STF2340 STMicroelectronics
STMicroelectronics

Low voltage fast-switching PNP power transistors

2STF2340 2STN2340 Low voltage fast-switching PNP power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC conve
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2STN2340 STMicroelectronics
STMicroelectronics

Low voltage fast-switching PNP power transistors

2STF2340 2STN2340 Low voltage fast-switching PNP power transistors Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ LED ■ Motherboard & hard disk drive ■ Mobile equipment ■ DC-DC conve
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AM2340NE Analog Power
Analog Power

N-Channel 40-V (D-S) MOSFET

Analog Power N-Channel 40-V (D-S) MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and b
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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