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NTE235 даташитФункция этой детали – «SilICon NPN Transistor Final Rf Power Output». |
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Номер в каталоге | Производители | Описание | |
NTE235 | NTE |
Silicon NPN Transistor Final RF Power Output NTE235 Silicon NPN Transistor Final RF Power Output
Description: The NTE235 is an NPN silicon transistor in a TO220 type case designed for use in high power output amplifier stages such as citizen band communications equipment. Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage (RBE = 150Ω), VCER . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2350 | NTE |
Silicon Darlington Transistors NTE2349 (NPN) & NTE2350 (PNP) Silicon Darlington Transistors High Current, General Purpose
Description:
The NTE2349 (NPN) and NTE2350 (PNP) are silicon complementary Darlington transistors in a TO3 type package designed for use as output devices in general purpose amplifier applications.
Features:
D High DC Current Gain: hFE = 1000 (Min) @ IC = 25A hFE = 400 (Min) @ IC = 50A
D Diode Protection to Rated IC D Monolithic Construction w/Built–In Base–Emitter Shunt Resistor
D Junction Temperature to +200°C
Absolute M |
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NTE2351 | NTE |
Silicon Complementary Transistors Darlington Power Amp / Switch NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2352 | NTE |
Silicon Complementary Transistors NTE2351 (NPN) & NTE2352 (PNP) Silicon Complementary Transistors
Darlington Power Amp, Switch
Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2353 | NTE |
Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode NTE2353 Silicon NPN Transistor TV Horizontal Deflection Output w/Damper Diode
Features: D High Speed: tf = 100nsec D High Breakdown Voltage: VCBO = 1500V D On–Chip Damper Diode Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2354 | NTE |
Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT NTE2354
Silicon NPN Transistor High Voltage Horizontal Output for High Definition CRT
Applications: D High–definition color display horizontal deflection output Features: D Fast speed: tf = 100ns Typ D High breakdown voltage: VCBO = 1500V D High reliability Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1500V Collector–to–Emitter Voltage, VCEO . . . . . . . . |
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NTE2355 | NTE |
Silicon Complementary Transistors Digital w/2 Built-In 10k Bias Resistors NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors
Features: D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type) Applications: D Switching Circuit D Inverter D Interface Circuit D Driver Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, VCEO |
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NTE2356 | NTE |
Silicon Complementary Transistors NTE2355 (NPN) & NTE2356 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 10k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 10kΩ, R2 = 10kΩ) D Small–Sized Package (TO92 type)
Applications: D Switching Circuit D Inverter D Interface Circuit D Driver
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V Collector to Emitter Voltage, V |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |