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Datasheet NTE236 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 11 | NTE236 | Silicon NPN Transistor Final RF Power Output (PO = 16W / 27MHz / SSB) NTE236 Silicon NPN Transistor Final RF Power Output (PO = 16W, 27MHz, SSB)
Description: The NTE236 is a silicon NPN epitaxial planer type transistor designed for RF power amplifiers on HF band mobile radio applications. Features: D High Power Gain: Gpe ≥ 12dB (VCC = 12V, PO = 16W, f = 27MHz) D Abi |
 NTE |
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| 10 | NTE2360 | Silicon Complementary Transistors NTE2359 (NPN) & NTE2360 (PNP) Silicon Complementary Transistors Digital w/2 Built–In 47k Bias Resistors
Features:
D Built–In Bias Resistor (R1 = 47kΩ, R2 = 47kΩ) D Small–Sized Package (TO92 type)
Applications: D Switching Circuit D Inverter D Interface Circuit D Driver
Absolute Maximum |
NTE |
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| 9 | NTE2361 | Silicon Complementary Transistors High Speed Switch NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors
High Speed Switch
Description: The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible fo |
NTE |
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| 8 | NTE2362 | Silicon Complementary Transistors NTE2361 (NPN) & NTE2362 (PNP) Silicon Complementary Transistors
High Speed Switch
Description:
The NTE2361 (NPN) and NTE2362 (PNP) complimentary silicon transistors are designed for general–purpose amplifier and high speed switching applications. The high gain of these devices makes it possible f |
NTE |
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