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NTE240 даташитФункция этой детали – «SilICon Complementary Transistors». |
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Номер в каталоге | Производители | Описание | |
NTE240 | NTE |
Silicon Complementary Transistors NTE191 (NPN) & NTE240 (PNP) Silicon Complementary Transistors
High Voltage Video Amplifier
Description:
The NTE191 (NPN) and NTE240 (PNP) are silicon complementary transistors in a TO202N type package designed for high–voltage video and luminance output stages in TV receivers.
Features:
D High Collector–Emitter Breakdown Voltage: V(BR)CEO = 300V (Min) @ IC = 1mA D Low Collector–Emitter Saturation Voltage: VCE(sat) = 0.75V (Max) @ IC = 30mA D Low Collector–Base Capacitance: Ccb = 3pF (Max) @ VCB = 20V
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NTE2401 | NTE |
Silicon PNP Transistor RF Stages in FM Front Ends NTE2401 Silicon PNP Transistor RF Stages in FM Front Ends
Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications. Absolute Maximum Ratings: Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2402 | NTE |
Silicon Complementary Transistors Low Noise / UHF/VHF Amplifier NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors Low Noise, UHF/VHF Amplifier
Description: The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices als |
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NTE2403 | NTE |
Silicon Complementary Transistors NTE2402 (NPN) & NTE2403 (PNP) Silicon Complementary Transistors
Low Noise, UHF/VHF Amplifier
Description:
The NTE2402 (NPN) and NTE2403 (PNP) are silicon complementary transistors in an SOT–23 type surface mount package designed for use in UHF and microwave amplifiers in thick and thin–film circuits, such as in aerial amplifiers, radar systems, oscilloscopes, spectrum analysers, etc. These transistors feature low intermodulation distortion and high power gain. Due to very high transition frequency, these devices al |
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NTE2404 | NTE |
Silicon Complementary Transistors Darlington / General Purpose NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors Darlington, General Purpose
Description: The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2405 | NTE |
Silicon Complementary Transistors NTE2404 (NPN) & NTE2405 (PNP) Silicon Complementary Transistors
Darlington, General Purpose
Description:
The NTE2404 (NPN) and NTE2405 (PNP) are silicon complementary Darlington transistors in an SOT–23 type surface mount case designed for general–purpose applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2406 | NTE |
Silicon NPN Transistor General Purpose Amp / Surface Mount (Compl to NTE2407) NTE2406 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE2407 | NTE |
Silicon PNP Transistor General Purpose Amp / Surface Mount (Compl to NTE2406) NTE2407 Silicon PNP Transistor General Purpose Amp, Surface Mount (Compl to NTE2406)
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter–Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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