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NTE2632 даташитФункция этой детали – «Integrated Circuit Quad Differential Line Receiver». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE2632 | NTE |
Integrated Circuit Quad Differential Line Receiver NTE2632 Integrated Circuit Quad Differential Line Receiver
Functional Description: The NTE2632 is a quad line receiver constructed using Advanced Low–Power Schottky processing in a 16–Lead DIP type package designed to meet the requirements of RS–422 and RS–423, and federal standards 1020 and 1030 for balanced and unbalanced digital data transmission. This device features and input sensitivity of 200mV over the input voltage range of ±7V. The NTE2632 provides an enable and disable function common to all four rec |
Это результат поиска, начинающийся с "2632", "NTE2" |
Номер в каталоге | Производители | Описание | |
2SC2632 | Panasonic Semiconductor |
Silicon NPN epitaxial planer type(For low-frequency high breakdown voltage amplification) Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1124
Unit: mm
5.9± 0.2 4.9± 0.2
q q q
2.54± 0.15
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emit |
|
2SK2632LS | Sanyo Semicon Device |
N-Channel Silicon MOSFET Ordering number:ENN5531B
N-Channel Silicon MOSFET
2SK2632LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2078B
[2SK2632LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 |
|
2SK2632LS | Sanyo |
N-Channel Silicon MOSFET Ordering number:ENN5531B
N-Channel Silicon MOSFET
2SK2632LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2078B
[2SK2632LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 |
|
2SK2632LS | Sanyo Semicon Device |
N-Channel Silicon MOSFET Ordering number:ENN5531B
N-Channel Silicon MOSFET
2SK2632LS
Ultrahigh-Speed Switching Applications
Features
· Low ON-resistance. · Low Qg.
Package Dimensions
unit:mm 2078B
[2SK2632LS]
10.0
3.5
4.5
2.8
3.2
7.2 16.0
16.1
0.9 1.2
14.0
3.6
0.7
0.75 |
|
A43L2632 | AMIC Technology |
1M X 32 Bit X 4 Banks Synchronous DRAM
A43L2632
Preliminary
Document Title 1M X 32 Bit X 4 Banks Synchronous DRAM Revision History
Rev. No.
0.0
1M X 32 Bit X 4 Banks Synchronous DRAM
History
Initial issue
Issue Date
January 13, 2005
Remark
Preliminary
PRELIMINARY
(January, 2005, Version 0.0) |
|
C2632 | Panasonic Semiconductor |
NPN Transistor - 2SC2632 Transistor
2SC2632
Silicon NPN epitaxial planer type
For low-frequency high breakdown voltage amplification Complementary to 2SA1124
s Features
q Satisfactory linearity of forward current transfer ratio hFE. q High collector to emitter voltage VCEO. q Small collector output capa |
[1]  
Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
|
NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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