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NTE2661 даташитФункция этой детали – «SilICon NPN Transistor Horizontal Deflection Output». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE2661 | NTE Electronics |
Silicon NPN Transistor Horizontal Deflection Output NTE2661 Silicon NPN Transistor Horizontal Deflection Output for HDTV
Features: D High Speed: tf = 0.15µs Typ D High Breakdown Voltage: VCBO = 1700V D Low Saturation Voltage: VCE(sat) = 3V Max Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−to−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1700V Collector−to−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
Это результат поиска, начинающийся с "2661", "NTE2" |
Номер в каталоге | Производители | Описание | |
23226615xxxx | Vishay Siliconix |
(232266x5xxxx) PTC Thermistors
2322 4/5/6.. .....
Vishay BCcomponents
PTC Thermistors For Overload And Overcurrent Protection
FEATURES
• Different voltages to be chosen in function of the application • Available in three mechanical versions: – 2322 66. 4.... naked discs – 2322 66. |
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2DD2661 | Diodes |
NPN SURFACE MOUNT TRANSISTOR NEW PRODUCT
2DD2661
LOW VCE(SAT) NPN SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
• Epitaxial Planar Die Construction • Ideally Suited for Automated Assembly Processes • Ideal for Medium Power Switching or Amplification Applications • Complementary PNP Type Avail |
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2SK2661 | Toshiba Semiconductor |
Silicon N Channel MOS Type Field Effect Transistor 2SK2661
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π–MOSV)
2SK2661
Chopper Regulator, DC–DC Converter and Motor Drive Applications
Unit: mm
z Low drain–source ON resistance : RDS (ON) = 1.35 Ω (typ.)
z High forward transfer admittance : |Yfs| = 4.0 S |
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95001-2661 | Molex |
(95001-xxxx) PHONE CONNECTOR FEATURES AND SPECIFICATIONS
s s s s
Modular Jack
Electrical Voltage: 125V Current: 1.5A Contact Resistance: 20mΩ max. Dielectric Withstanding Voltage: 1000V Insulation Resistance: 500 MΩ min. Physical Housing: Black polyester, UL 94V-0 Contact: Phosphor Bronze Plating: Post |
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AD52661 | Elite Semiconductor |
15W Stereo Class-D Audio Amplifier ESMT/EMP
15W Stereo Class-D Audio Amplifier With Power Limit and Dynamic Range Control
Features
Single supply voltage 8 ~ 16.5V for loudspeaker driver Built-in LDO output 3.3V for others Loudspeaker power from 15V supply Stereo mode: 15W/CH into 8Ω @10% THD+N Mono mode: 30W/CH |
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BU2661FV | ROHM Semiconductor |
Low-voltage RDS / RBDS decoder
Audio ICs
Low-voltage RDS / RBDS decoder
BU2661FV
The BU2661FV is a RDS / RBDS decoder that employs a digital PLL and has a built-in anti-aliasing filter and an eightstage BPF (switched-capacitor filter). It can operate at a low-voltage power supply (from 2. |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |