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Datasheet NTE27 Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | |
| 13 | NTE27 | Germanium PNP Transistor High Current / High Gain Amp NTE27 Germanium PNP Transistor High Current, High Gain Amp
Description: The NTE27 is a PNP germanium power transistor designed for high current applications requiring high–gain and low saturation voltages. Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . |
 NTE |
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| 12 | NTE270 | Silicon Complementary Transistors Darlington Power Amp / Switch NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch
Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications. Fe |
NTE |
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| 11 | NTE2708 | Integrated Circuit NMOS / 8K UV EPROM / 450ns NTE2708 Integrated Circuit
NMOS, 8K UV EPROM, 450ns
Description: The NTE2708 is an ultra–violet light–erasable, electrically programmable read only memory. It has 8, 192 bits organized as 1024 words of 8–bit length. This device is fabricated using N–channel silicon– gate technology for hig |
NTE |
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| 10 | NTE271 | Silicon Complementary Transistors NTE270 (NPN) & NTE271 (PNP) Silicon Complementary Transistors
Darlington Power Amp, Switch
Description: The NTE270 (NPN) and NTE271 (PNP) are silicon Darlington complementary power transistors in a TO218 type package designed for general purpose amplifier and low frequency switching applications.
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NTE |
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