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NTE28 даташитФункция этой детали – «Germanium PNP Transistor». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE28 | NTE |
Germanium PNP Transistor
NTE28 Germanium PNP Transistor High Current, High Gain Amplifier
Absolute Maximum Ratings: Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 45V Collector−Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Collector−Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE280 | NTE |
Silicon Complementary Trasistors Audio Power Amplifier NTE280 (NPN) & NTE281 (PNP) Silicon Complementary Trasistors
Audio Power Amplifier
Description: The NTE280 (NPN) and NTE281 (PNP) are silicon complementary transistors in a TO3 type package designed for use in high power, high fidelity audio frequency amplifier applications.
Features:
D High Power Dissipation: PC = 100W D Collector–Emitter Breakdown Voltage: V(BR)CEO = 140V
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . |
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NTE281 | NTE |
Silicon Complementary Transistors |
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NTE282 | NTE |
Silicon NPN Transistor Final RF Power Amp / Switch NTE282 Silicon NPN Transistor Final RF Power Amp, Switch
Applications: D HF Power Amplifiers, Switchings D 27MHz, 4W, AM, Citizens Band Transmitter Output Stage Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V Emitter |
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NTE283 | NTE |
Silicon NPN Transistor Horizontal Output / Switch NTE283 Silicon NPN Transistor Horizontal Output, Switch
Description: The NTE283 is a silicon NPN transistor in a TO3 type package designed for high–voltage, high– speed, power switching in inductive circuits where fall time is critical. Typical applications include switching regulators, PWM inverters, solenoid and relay drivers. Absolute Maximum Ratings: Collector–Emitter Voltage (IB = 0), VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 325V Collector–Emitter Volt |
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NTE284 | NTE |
Silicon Complementary Transistors Audio Amplifier Output NTE284 (NPN) & NTE285 (PNP)
Silicon Complementary Transistors Audio Amplifier Output
Description:
The NTE284 (NPN) and NTE285 (PNP) are silicon complementary power transistors in a TO3 type package designed for use in power amplifier applications.
Applications: D Recommended for 100W High–Fidelity Audio Frequency Amplifier Output Stage
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector to Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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NTE285 | NTE |
Silicon Complementary Transistors |
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NTE287 | NTE |
Silicon Complementary Transistors High Voltage / General Purpose Amplifier NTE287 (NPN) & NTE288 (PNP) Silicon Complementary Transistors High Voltage, General Purpose Amplifier
Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Collector–Base Voltage, VCBE . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300V Emitter–Base Voltage, VEBO NTE287 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
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