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NTE3083 даташитФункция этой детали – «Optoisolator NPN Darlington Transistor Output». |
Показать результаты поиска |
Номер в каталоге | Производители | Описание | |
NTE3083 | NTE |
Optoisolator NPN Darlington Transistor Output NTE3083 Optoisolator NPN Darlington Transistor Output
Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012Ω, 0.5pF Absolute Maximum Ratings: Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Operating Temperature Range, Topr . . . |
Это результат поиска, начинающийся с "3083", "NTE3" |
Номер в каталоге | Производители | Описание | |
2SC3083 | Sanyo Semicon Device |
NPN Triple Diffused Planar Silicon Transistor Ordering number:EN947B
NPN Triple Diffused Planar Silicon Transistor
2SC3083
400V/6A Switching Regulator Applications
Features
· High breakdown voltage (VCBO≥500V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2022A
[2SC3083]
Specifications
1 : Base 2 |
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2SC3083 | SavantIC |
SILICON POWER TRANSISTOR SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3083
DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·400V/6A switching regulator appli |
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C3083 | Sanyo |
NPN Transistor - 2SC3083 Ordering number:EN947B
NPN Triple Diffused Planar Silicon Transistor
2SC3083
400V/6A Switching Regulator Applications
Features
· High breakdown voltage (VCBO≥500V). · Fast switching speed.
· Wide ASO.
Package Dimensions
unit:mm 2022A
[2SC3083]
Specifications
1 : Base 2 |
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C30831 | PerkinElmer Optoelectronics |
(C30807 - C30831) N-Type Silicon PIN Photodetectors N-Type Silicon PIN Photodetectors
C30807, C30808, C30809, C30810, C30822, C30831
EVERYTHING IN A NEW LIGHT.
Description
This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr |
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CA3083 | Intersil |
General Purpose High Current NPN Transistor Array CA3083
Data Sheet September 1998 File Number 481.4
General Purpose High Current NPN Transistor Array
The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched a |
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CEM3083 | CET |
P-Channel Enhancement Mode Field Effect Transistor CEM3083
P-Channel Enhancement Mode Field Effect Transistor
PRELIMINARY
FEATURES
-30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V.
Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac |
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Последние обновления
Номер в каталоге | Производители | Описание | |
2N3904 | Unisonic Technologies |
Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В. |
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NE555 | ST Microelectronics |
Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ). |
DataSheet26.com | 2020 | Контакты |