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NTE3083 даташит

Функция этой детали – «Optoisolator NPN Darlington Transistor Output».



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Номер в каталоге Производители Описание PDF
NTE3083 NTE
NTE
  Optoisolator NPN Darlington Transistor Output

NTE3083 Optoisolator NPN Darlington Transistor Output Description: The NTE3083 contains a gallium arsenide infrared emitter optically coupled to a silicon planer photo– darlington in a 6–Lead DIP type package. Features: D High Sensitivity: 1mA on the Input will Sink a TTL gate D High Isolation: 3550VDC, 1012Ω, 0.5pF Absolute Maximum Ratings: Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65° to +150°C Operating Temperature Range, Topr . . .
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Это результат поиска, начинающийся с "3083", "NTE3"

Номер в каталоге Производители Описание PDF
2SC3083 Sanyo Semicon Device
Sanyo Semicon Device

NPN Triple Diffused Planar Silicon Transistor

Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3083] Specifications 1 : Base 2
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2SC3083 SavantIC
SavantIC

SILICON POWER TRANSISTOR

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC3083 DESCRIPTION ·With TO-3PN package ·High breakdown voltage (VCBO 500V) ·Fast switching speed ·Wide ASO Safe Operating Area APPLICATIONS ·400V/6A switching regulator appli
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C3083 Sanyo
Sanyo

NPN Transistor - 2SC3083

Ordering number:EN947B NPN Triple Diffused Planar Silicon Transistor 2SC3083 400V/6A Switching Regulator Applications Features · High breakdown voltage (VCBO≥500V). · Fast switching speed. · Wide ASO. Package Dimensions unit:mm 2022A [2SC3083] Specifications 1 : Base 2
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C30831 PerkinElmer Optoelectronics
PerkinElmer Optoelectronics

(C30807 - C30831) N-Type Silicon PIN Photodetectors

N-Type Silicon PIN Photodetectors C30807, C30808, C30809, C30810, C30822, C30831 EVERYTHING IN A NEW LIGHT. Description This family of N-type silicon p-i-n photodiodes is designed for use in a wide variety of broad band low light level applications covering the spectral range fr
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CA3083 Intersil
Intersil

General Purpose High Current NPN Transistor Array

CA3083 Data Sheet September 1998 File Number 481.4 General Purpose High Current NPN Transistor Array The CA3083 is a versatile array of five high current (to 100mA) NPN transistors on a common monolithic substrate. In addition, two of these transistors (Q1 and Q2) are matched a
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CEM3083 CET
CET

P-Channel Enhancement Mode Field Effect Transistor

CEM3083 P-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES -30V, -13A, RDS(ON) = 10mΩ @VGS = -10V. RDS(ON) = 15.5mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is ac
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Последние обновления

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Номер в каталоге Производители Описание PDF
2N3904 Unisonic Technologies
Unisonic Technologies

Это популярный биполярный переходной транзистор (BJT), обычно используемый в электронных схемах. Транзистор NPN с максимальным номинальным током 200 мА и максимальным номинальным напряжением 40 В.

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NE555 ST Microelectronics
ST Microelectronics

Это широко используемая интегральная схема таймера (ИС), которую можно использовать для генерирования сигналов с точной временной задержкой, колебаний и широтно-импульсной модуляции (ШИМ).

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